參數(shù)資料
型號: WED3DG72128V10D2
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: DRAM
英文描述: 128M X 72 SYNCHRONOUS DRAM MODULE, DMA168
封裝: DIMM-168
文件頁數(shù): 4/5頁
文件大小: 461K
代理商: WED3DG72128V10D2
WED3DG72128V-D2
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
Jan. 2004
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
WED3DG72128V-D2
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
Jan. 2004
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
OPERATING CURRENT CHARACTERISTICS
(VCC = 3.3V, TA = 0°C to +70°C)
Version
Parameter
Symbol
Conditions
133
100
Units
Note
Operating Current
(One bank active)
ICC1
Burst Length = 1
tRC ≥ tRC(min)
IOL = 0mA
3,200 3,020
mA
1
Precharge Standby Current
in Power Down Mode
ICC2P
CKE ≤ VIL(max), tCC = 10ns
422
mA
3
ICC2PS
CKE & CK ≤ VIL(max), tCC = ∞
74
Precharge Standby Current
in Non-Power Down Mode
Icc2N
CKE ≥ VIH(min), CS ≥ VIH(min), tcc =10ns
Input signals are charged one time during 20ns
926
mA
3
Icc2NS
CKE ≥ VIH(min), CK ≤VIL(max), tCC = ∞
Input signals are stable
506
Active standby current in
power-down mode
ICC3P
CKE ≥ VIL(max), tCC = 10ns
566
mA
3
ICC3PS
CKE & CK ≤ VIL(max), tCC = ∞
220
Active standby current in
non power-down mode
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tcc = 10ns
Input signals are changed one time during 20ns
1,430
mA
3
ICC3NS
CKE ≥ VIH(min), CK ≤ VIL(max), tcc = ∞
Input signals are stable
905
mA
3
Operating current (Burst mode)
ICC4
Io = mA
Page burst
4 Banks activated
tCCD = 2CK
3,560 3,110
mA
1
Refresh current
ICC5
tRC ≥ tRC(min)
5,000 4,820
mA
2
Self refresh current
ICC6
CKE ≤ 0.2V
460
mA
3
Notes: 1. Measured with outputs open.
2. Refresh period is 64ms.
3. Measured with 1 PLL & 2 Drive ICs.
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