參數(shù)資料
型號(hào): WED3DG644V10D1
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: DRAM
英文描述: 4M X 64 SYNCHRONOUS DRAM MODULE, DMA144
封裝: SODIMM-144
文件頁(yè)數(shù): 4/6頁(yè)
文件大?。?/td> 334K
代理商: WED3DG644V10D1
WED3DG644V-D1
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
Sept. 2002 Rev. 0
White Electronic Designs
OPERATING CURRENT CHARACTERISTICS
(VCC = 3.3V, TA = 0°C ≤ +70°C)
Notes:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS (VIH/VIL = VDDQ/VssQ)
Version
Parameter
Symbol
Conditions
133
100
Units
Note
Operating Current
ICC1
Burst Length = 1
460
400
mA1
(One bank active)
tRC ≥ tRC(min)
IOL = 0mA
Precharge Standby Current
ICC2P
CKE ≤ VIL(max), tCC = 10ns
5
mA
in Power Down Mode
ICC2PS
CKE & CLK ≤ VIL(max), tCC = ∞
5
Icc2N
CKE ≥ VIH(min), CS ≥ VIH(min), tcc = 10ns
Precharge Standby Current
Input signals are charged one time during 20
60
in Non-Power Down Mode
Icc2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tcc = ∞
mA
Input signals are stable
30
Active standby current in
ICC3P
CKE ≥ VIL(max), tCC = 10ns
15
mA
power-down mode
ICC3PS
CKE & CLK ≤ VIL(max), tcc = ∞
15
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tcc = 10ns
Active standby current in
Input signals are changed one time during 20ns
110
mA
non power-down mode
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tcc = ∞
input signals are stable
80
mA
Io = mA
Operating current (Burst mode)
ICC4
Page burst
560hh
440
mA
1
4 Banks activated
tCCD = 2CLK
Refresh current
ICC5
tRC ≥ tRC(min)
560
500
mA
2
Self refresh current
ICC6
CKE ≤ 0.2V
10
mA
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