參數(shù)資料
型號: WED3DG6432V7D1SG
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類: DRAM
英文描述: 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, ZMA144
封裝: ROHS COMPLIANT, SODIMM-144
文件頁數(shù): 3/9頁
文件大?。?/td> 245K
代理商: WED3DG6432V7D1SG
WED3DG6432V-D1
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
January 2006
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specications without notice.
PRELIMINARY
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Units
Voltage on any pin relative to VSS
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VCC supply relative to VSS
VCC, VCCQ
-1.0 ~ 4.6
V
Storage Temperature
TSTG
-55 ~ +150
°C
Power Dissipation
PD
8
W
Short Circuit Current
IOS
50
mA
Note: Permanent device damage may occur if “ABSOLUTE MAXIMUM RATINGS” are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
(Voltage Referenced to: VSS = 0V, TA = 0°C to +70°C)
Parameter
Symbol
Min
Max
Unit
Note
Supply Voltage
VCC, VCCQ
3
3.6
V
Input High Voltage (Logic 1) All inputs
VIH
2VCC + 0.3
V
22
Input Low Voltage (Logic 0) All input
VIL
-0.3
0.8
V
22
Input Leakage Current:
Any input 0V ≤ VIN ≤ VCC
(All other pins not under test = 0V)
Command and
Address Inputs
II
-40
40
μA33
CK, S#
-20
20
μA33
DQMB
-5
5
μA
Output High Voltage: DQ pins are
dislabled; 0V ≤ VIN ≤ VCCQ
DQ
IOZ
-5
5
μA
Output Levels:
Output High Voltage (IOUT = -4mA)
VOH
2.4
V
Output Low Voltage (IOUT = 4mA)
VOL
0.4
V
Capacitance
(TA = 23°C, f = 1MHz, VCC = 3.3V, VREF=1.4V ± 200mV)
Parameter
Symbol
Min
Max
Unit
Input Capacitance: Address and Command
CI1
20
28
pF
Input Capacitance: (CK, CKE, S#)
CI2
10
14
pF
Input Capacitance: DQMB
CI3
57
pF
Input Capacitance: DQ
CIO
812
pF
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