- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄204016 > WED3DG6365V75D2 (MICROSEMI CORP-PMG MICROELECTRONICS) 64M X 64 SYNCHRONOUS DRAM MODULE, DMA168 PDF資料下載
參數(shù)資料
| 型號： | WED3DG6365V75D2 |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 64M X 64 SYNCHRONOUS DRAM MODULE, DMA168 |
| 封裝： | DIMM-168 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 141K |
| 代理商： | WED3DG6365V75D2 |
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3DG6465V-D2
June, 2003
Rev. # 1
FINAL
White Electronic Designs Corp. reserves the right to change products or specications without notice.
OPERATING CURRENT CHARACTERISTICS
(VCC = 3.3V, TA = 0°C to +70°C)
Notes:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS (VIH/VIL = VDDQ/VSSQ)
Parameter
Symbol
Conditions
Version
Units Note
133
100
Operating Current
(One bank active)
ICC1
Burst Length = 1
tRC ≥ tRC(min)
IOL = 0mA
920
880
mA
1
Precharge Standby Current
in Power Down Mode
ICC2P
CKE ≤ VIL(max), tCC = 10ns
40
mA
ICC2PS
CKE & CK ≤ VIL(max), tCC = ∞
40
Precharge Standby Current
in Power Down Mode
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tcc = 10ns
Input signals are charged one time during 20ns
320
mA
ICC2NS
CKE ≥ VIH(min), CK ≤ VIL(max), tcc = ∞
Input signals are stable
160
Active standby current
in power-down mode
ICC3P
CKE ≥ VIL(max), tCC = 10ns
70
mA
ICC3PS
CKE & CK ≤ VIL(max), tcc = ∞
70
Active standby current
in non power-down mode
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tcc = 10ns
Input signals are charged one time during 20ns
480
mA
ICC3NS
CKE ≥ VIH(min), CK ≤ VIL(max), tcc = ∞
Input signals are stable
360
Operating current
(Burst mode)
ICC4
Io = mA
Page burst
4 Banks activated
tCCD = 2*CK
1,840 1,440
mA
1
Refresh current
ICC5
tRC ≥ tRC(min)
2,800 2,560
mA
2
Self refresh current
ICC6
CKE ≤ 0.2V
50
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WED3DG638V75D2 | 8M X 64 SYNCHRONOUS DRAM MODULE, DMA168 |
| WED3DG638V10D2 | 8M X 64 SYNCHRONOUS DRAM MODULE, DMA168 |
| WED3DG6417V75D1-GG | 16M X 64 SYNCHRONOUS DRAM MODULE, DMA144 |
| WED3DG6432V7D1SG | 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, ZMA144 |
| WED3DG644V10D1 | 4M X 64 SYNCHRONOUS DRAM MODULE, DMA144 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WED3DG6365V7D2 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 64Mx64, SDRAM UNBUFFERED |
| WED3DG6366V10D2 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB -64Mx64, SDRAM UNBUFFERED |
| WED3DG6366V75D2 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB -64Mx64, SDRAM UNBUFFERED |
| WED3DG6366V7D2 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB -64Mx64, SDRAM UNBUFFERED |
| WED3DG637V10D2 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:64MB- 8Mx64 SDRAM UNBUFFERED |
發(fā)布緊急采購，3分鐘左右您將得到回復。