參數(shù)資料
型號: SW-425PIN
英文描述: 3 Watt Cellular T/R and Antenna Changeover Switch, DC - 3.0 GHz
中文描述: 3瓦特細胞噸/ R和天線切換開關,直流- 3.0吉赫
文件頁數(shù): 1/3頁
文件大?。?/td> 127K
代理商: SW-425PIN
3 Watt Cellular T/R and Antenna Changeover Switch, DC - 3.0 GHz
SW-425
SW-425
M/A-COM Division of AMP Incorporated North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
3 Watt Cellular T/R and Antenna
Changeover Switch, DC - 3.0 GHz
Features
Low Cost Plastic SOT-26 Package
Low Insertion Loss <0.6dB @ 1900 MHz
Low Power Consumption <20μA @ +3V
Very High Intercept Point: 53 dBm IP
3
Both Positive and Negative 2.5 to 8 V Control
For CDMA, W-CDMA, TDMA, GSM, PCS and DCS
Applications
Description
M/A-COM’s SW-425 is a GaAs monolithic switch in a low cost
SOT-26 surface mount plastic package. The SW-425 is ideally
suited for applications where very low power consumption
(<10μA@5V), low intermodulation products and very small size
are required. Typical applications include Internal/External antenna
select switch for portable telephones and data radios. In addition,
because of its low loss, good isolation and inherent speed, the
SW-425 can be used as a conventional T/R switch or as an antenna
diversity switch. The SW-425 can be used in power applications up
to 3 watts in systems such as celluar PCS, CDMA, W-CDMA,
TDMA, GSM and other analog/digital wireless communications
systems.
The SW-425 is fabricated using a new 0.5 micron gate length GaAs
PHEMT process. The process features full chip passivation for
increased performance and reliability.
SOT-26 Plastic Package
Electrical Specifications T
A
= 25°C
Ordering Information
Part Number
SW-425 PIN
SW-425TR
SW-425RTR
Package
SOT-26 Plastic Package
Forward Tape and Reel
1
Reverse Tape and Reel
1
PIN 1
XX#Y
1. Reference Application Note M513 for reel size information.
Parameter
Test Conditions
Units
dB
dB
dB
dB
dB
dB
Min.
Typ.
0.4
0.55
0.7
20
15
12
1.2:1
34
Max.
0.5
0.65
0.8
Insertion Loss
Insertion Loss
Insertion Loss
Isolation
Isolation
Isolation
VSWR
P
1dB
(3V supply)
P
1dB
(5V supply)
Input IP
2
DC - 1 GHz
1- 2 GHz
2 - 3 GHz
DC - 1 GHz
1 - 2 GHz
2 - 3 GHz
DC - 3 GHz
500 MHz - 3 GHz
18
13
10
1.4:1
dBm
32
500 MHz - 3 GHz
2-Tone, 5 MHz spacing, 0.9 GHz
+10 dBm (+13 dBm total) V
CTL
=3V
2-Tone, 5 MHz spacing, 0.9 GHz
+10 dBm (+13 dBm total) V
CTL
=3V
Pin 30 dBm |V
CTL
| = 3V
dBm
dBm
34
62
36
70
Input IP
3
dBm
48
53
Harmonics 2
nd
3
rd
dBc
65
45
70
48
Harmonics 2
nd
3
rd
Pin 33 dBm |V
CTL
| = 5V
dBc
65
65
75
75
T
rise
,
T
fall
T
,
T
T
ransients
Gate Leakage Current
10% to 90% RF, 90% to 10% RF
50% Control to 90% RF, Control to 10% RF
In-Band
V
CTL
= 3 V
nS
nS
mV
μA
60
20
20
10
20
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