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參數(shù)資料
| 型號： | STP6NK50Z |
| 英文描述： | N-CHANNEL 500V - 0.98 OHM - 5.6A TO-220 / TO-220FP / DPAK ZENER-PROTECTED SUPERMESH%99POWER MOSFET |
| 中文描述： | N溝道500V - 0.98歐姆- 5.6A至220 /對220FP / DPAK封裝穩(wěn)壓保護(hù)SUPERMESHPOWER MOSFET的 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 363K |
| 代理商： | STP6NK50Z |
STP6NK50Z - STF6NK50Z - STD6NK50Z
2/9
ABSOLUTE MAXIMUM RATINGS
Symbol
( ) Pulse width limited by safe operating area
(1) I
SD
≤
6A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
(#) When mounted on minimum Footprint
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
STP6NK50Z
STD6NK50Z
STF6NK50Z
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
500
V
500
V
Gate- source Voltage
± 30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
5.6
5.6 (*)
A
3.5
3.5 (*)
A
22.4
22.4 (*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
)
Peak Diode Recovery voltage slope
90
25
W
0.72
0.2
W/°C
V
ESD(G-S)
dv/dt (1)
V
ISO
T
j
T
stg
3000
V
4.5
V/ns
Insulation Withstand Voltage (DC)
-
2500
V
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°C
°C
TO-220
DPAK
1.39
62.5
TO-220FP
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
5
°C/W
°C/W
°C
100
Maximum Lead Temperature For Soldering Purpose
300
Parameter
Max Value
6
Unit
A
220
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STF6NK60Z | Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):1A; Gate Trigger Current (QI), Igt:10mA; Current, It av:1A; Leaded Process Compatible:Yes; Mounting Type:Through Hole RoHS Compliant: Yes |
| STP7N20 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 7A I(D) | TO-220 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP6NK60Z | 功能描述:MOSFET N-Ch 600 Volt 6 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP6NK60Z | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
| STP6NK60ZFP | 功能描述:MOSFET N-Channel 600V Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP6NK60ZFP | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220FP |
| STP6NK70Z | 功能描述:MOSFET N Ch 700V 1.5 Ohm 5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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