- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄372361 > STP6NC80FP TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.1A I(D) | TO-220FP PDF資料下載
參數(shù)資料
| 型號(hào)： | STP6NC80FP |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.1A I(D) | TO-220FP |
| 中文描述： | 晶體管| MOSFET的| N溝道| 800V的五（巴西）直| 5.1AI（四）|對(duì)220FP |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 75K |
| 代理商： | STP6NC80FP |
3/8
STP6NC80Z/FP/STP6NC80Z-1
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
Rise Time
t
r
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
GATE-SOURCE ZENER DIODE
Symbol
Gate-Source Breakdown
Voltage
Note: 1. Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3.
V
BV
=
α
T (25
°
-T) BV
GSO
(25
°
)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zenerdiodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be appliedfrom gate to souce.In this respect the 25V Zener voltageis appropiate to achieve an efficient
and cost-effectiveintervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
Test Conditions
V
DD
= 400 V, I
D
= 2.9 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
Min.
Typ.
27
Max.
Unit
ns
10
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
V
DD
= 640V, I
D
= 5.8A,
V
GS
= 10V
30
nC
Gate-Source Charge
7
nC
Gate-Drain Charge
13
nC
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
V
DD
= 640V, I
D
= 5.8 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
TBD
ns
Fall Time
TBD
ns
Cross-over Time
TBD
ns
Parameter
Test Conditions
Min.
Typ.
Max.
5.1
Unit
A
Source-drain Current
I
SDM(1)
V
SD(2)
t
rr
Q
rr
I
RRM
Source-drain Current (pulsed)
20
A
Forward On Voltage
I
SD
= 5.1 A, V
GS
= 0
1.6
V
Reverse Recovery Time
I
SD
= 5.8 A, di/dt = 100A/
μ
s,
V
DD
= 100V, T
j
= 150
°
C
(see test circuit, Figure 5)
TBD
ns
Reverse Recovery Charge
TBD
μ
C
Reverse Recovery Current
TBD
A
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Igs=
±
1mA (Open Drain)
25
V
α
T
Voltage Thermal Coefficient
T=25
°
C Note(3)
1.3
10
-4
/
°
C
Rz
Dynamic Resistance
I
D
= 20 mA, V
GS
= 0
90
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STP6NK50Z | N-CHANNEL 500V - 0.98 OHM - 5.6A TO-220 / TO-220FP / DPAK ZENER-PROTECTED SUPERMESH%99POWER MOSFET |
| STF6NK60Z | Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):1A; Gate Trigger Current (QI), Igt:10mA; Current, It av:1A; Leaded Process Compatible:Yes; Mounting Type:Through Hole RoHS Compliant: Yes |
| STP7N20 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 7A I(D) | TO-220 |
| STP7N20FI | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 4A I(D) | TO-220VAR |
| STP80N03L06 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 80A I(D) | TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP6NC80Z | 功能描述:MOSFET TO-220AB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP6NC80ZFP | 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP6NC90Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
| STP6NC90ZFP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
| STP6NK50Z | 功能描述:MOSFET N-Ch 500 Volt 5.6Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。