參數(shù)資料
型號(hào)： STP6NC80FP
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.1A I(D) | TO-220FP
中文描述： 晶體管| MOSFET的| N溝道| 800V的五（巴西）直| 5.1AI（四）|對(duì)220FP
文件頁(yè)數(shù)： 2/8頁(yè)
文件大小： 75K
代理商： STP6NC80FP
STP6NC80Z/FP/STP6NC80Z-1
2/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(TCASE = 25
°
C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Breakdown Voltage
ON
(1)
Symbol
V
GS(th)
DYNAMIC
Symbol
TO-220 / I PAK
1
TO-220FP
3.13
Rthj-case
Thermal Resistance Junction-case Max
°
C/W
°
C/W
°
C/W
°
C
Rthj-amb
Thermal Resistance Junction-ambient Max
30
Rthc-sink
Thermal Resistance Case-sink Typ
0.1
T
l
Maximum Lead Temperature For Soldering Purpose
300
Parameter
Max Value
Unit
I
AR
5.1
A
E
AS
250
mJ
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
I
D
= 250
μ
A, V
GS
= 0
800
V
BV
DSS
/
T
J
Breakdown Voltage Temp.
Coefficient
I
D
= 1 mA, V
GS
= 0
0.9
V/
°
C
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125
°
C
1
μ
A
μ
A
50
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
20V
±
10
μ
A
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250
μ
A
Min.
3
Typ.
4
Max.
5
Unit
V
Gate Threshold Voltage
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 2.9 A
1.8
2
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
5.1
A
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 2.9A
Min.
Typ.
Max.
Unit
g
fs(1)
Forward Transconductance
8
S
C
iss
C
oss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1600
pF
Output Capacitance
124
pF
C
rss
Reverse Transfer
Capacitance
11
pF
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