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參數(shù)資料
| 型號： | STP6NA60FP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強(qiáng)模式快速功率MOS晶體管) |
| 中文描述： | N溝道增強(qiáng)模式快速功率MOS晶體管（不適用溝道增強(qiáng)模式快速功率馬鞍山晶體管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 49K |
| 代理商： | STP6NA60FP |
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
3.12
62.5
0.5
300
o
C/W
oC/W
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
C, I
D
= I
AR
, V
DD
= 50 V)
6.5
A
E
AS
215
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
μ
A
V
GS
= 0
600
V
I
DSS
Zero
Drain Current (V
GS
= 0)
Gate
Voltage
V
DS
= Max Rating
V
DS
= Max Rating
T
c
= 100
o
C
25
250
μ
A
μ
A
I
GSS
Gate-body
Current (V
DS
= 0)
Leakage
V
GS
=
±
30 V
±
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate
Voltage
Static Drain-source On
Resistance
Threshold
V
DS
= V
GS
I
D
= 250
μ
A
2.25
3
3.75
V
R
DS(on)
V
GS
= 10V I
D
= 2.5 A
1
1.2
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
6.5
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
ReverseTransfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 3 A
3.5
5.6
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
1150
155
40
1550
210
55
pF
pF
pF
STP6NA60FP
2/5
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