- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄372360 > STP20NM60FP (意法半導(dǎo)體) N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | STP20NM60FP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET |
| 中文描述： | N溝道600V的- 0.25ohm - 20A條TO-220/FP/D2PAK/I2PAK的MDmesh？功率MOSFET |
| 文件頁(yè)數(shù)： | 12/20頁(yè) |
| 文件大小： | 221K |
| 代理商： | STP20NM60FP |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)當(dāng)前第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)
12
STP2000QFP
32-bit SBus Master I/O Controller
Master I/O
July 1997
1. These minimum numbers are required to comply with ANSI SCSI spec. For Synchronous SCSI data transfers and FASTCLK enabled,
the clock inputs must also meet the following requirements: 2t
CP
+ t
CL
> 97.92 ns and 2t
CP
+ t
CH
> 97.92 ns.
Synchronous SCSI Input Cycle
42
Data setup to SCSI_REQ/SCSI_ACK low
5
–
ns
43
Data hold from SCSI_REQ/SCSI_ACK low
15
–
ns
44
SCSI_REQ assertion period
27
–
ns
45
SCSI_REQ negation period
20
–
ns
46
SCSI_ACK assertion period
20
–
ns
47
SCSI_ACK negation period
20
–
ns
AC Characteristics: Ethernet Timing
Signal #
Parameter
Min
Max
Units
48
ENET_TCLK period
99
101
ns
49
ENET_TCLK high pulse duration
45
–
ns
50
ENET_TCLK low pulse duration
45
–
ns
51
ENET_TCLK rise time
–
8
ns
52
ENET_TCLK fall time
–
8
ns
53
ENET_TENA propagation delay after rising edge of ENET_TCLK
–
25
ns
54
ENET_TENA hold time after ENET_TCLK rising
7
–
ns
55
ENET_TX propagation delay after ENET_TCLK rising
–
32
ns
56
ENET_TX hold time after ENET_TCLK rising
7
–
ns
57
ENET_RCLK period
85
118
ns
58
ENET_RCLK high pulse duration
38
–
ns
59
ENET_RCLK low pulse duration
38
–
ns
60
ENET_RCLK rise time
–
8
ns
61
ENET_RCLK fall time
–
8
ns
62
ENET_RX data rise time
–
8
ns
63
ENET_RX data fall time
–
8
ns
64
ENET_RX data hold time from ENET_RCLK rising
5
–
ns
65
ENET_RX data setup time to ENET_RCLK rising
40
–
ns
66
ENET_RENA low duration
120
–
ns
67
ENET_CLSN high duration
110
–
ns
68
ENET_RENA hold time after the rising edge of ENET_RCLK
1
–
ns
69
ENET_RENA defer before ENET_TENA
356
–
ns
70
ENET_RENA extended after ENET_RCLK last falling
–
275
ns
AC Characteristics: SCSI TIming (Continued)
Signal #
Parameter
Conditions
Min
Max
Units
This Material Copyrighted by Its Respective Manufacturer
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STP20NM505 | N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET |
| STP20NF06 | N-CHANNEL 60V - 0.06ohm - 20A TO-220/TO-220FP STripFET II POWER MOSFET |
| STP20N20 | 30V N-Channel PowerTrench MOSFET |
| STP20NM50 | N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET |
| STP20NM50FP | N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP20NM65N | 功能描述:MOSFET N-Channel 650V Pwr Mosfet RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP210N75F6 | 功能描述:MOSFET N-Ch 75V 3mOhm 120A STripFET VI RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP210NF02 | 功能描述:MOSFET N-Ch 20 Volt 120 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP211A-144-E | 功能描述:打印機(jī) MECH 58MM 144 DOT RoHS:否 制造商:Seiko Instruments 產(chǎn)品:Printer 電源電壓: 每行點(diǎn)數(shù):9 x 320 打印速度:52.5 cps, 80 cps 紙張寬度:112 mm |
| STP211B-192 | 制造商:Seiko Instruments Inc (SII) 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。