參數(shù)資料
型號： STD25NF10T4
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-252AA
中文描述： 晶體管| MOSFET的| N溝道| 100V的五（巴西）直|第25A條（?。﹟對252AA
文件頁數(shù)： 3/9頁
文件大?。?/td> 155K
代理商： STD25NF10T4
3/9
STD25NF10
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
Note: 1. Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Test Conditions
V
DD
= 50V, I
D
= 12.5 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
Min.
Typ.
17
Max.
Unit
ns
t
r
Rise Time
60
ns
Q
g
Q
gs
Total Gate Charge
V
DD
= 80V, I
D
=25A,V
GS
= 10V
55
nC
Gate-Source Charge
12
nC
Q
gd
Gate-Drain Charge
20
nC
Parameter
Test Conditions
V
DD
= 50V, I
D
= 12.5 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 3)
Min.
Typ.
60
15
Max.
Unit
ns
ns
Turn-off-Delay Time
Fall Time
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
25
A
I
SDM
(1)
Source-drain Current (pulsed)
100
A
V
SD
(2)
Forward On Voltage
I
SD
= 25 A, V
GS
= 0
I
SD
= 25 A, di/dt = 100A/
μ
s,
V
DD
= 50V, T
j
= 150
°
C
(see test circuit, Figure 5)
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
160
ns
nC
A
Thermal Impedence
Safe Operating Area
相關(guān)PDF資料
PDF描述
STD25NF10 N-CHANNEL 100V - 0.033ohm - 25A DPAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
STD29NF03L-1 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 29A I(D) | TO-251AA
STD29NF03LT4 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 29A I(D) | TO-252AA
STD2N50T4 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2A I(D) | TO-252
STD2NA50-1 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.2A I(D) | TO-251
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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