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參數(shù)資料
| 型號： | STB6LNC60 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V - 1ohm - 5.8A D2PAK PowerMesh⑩II MOSFET |
| 中文描述： | N溝道600V的- 1ohm - 5.8A D2PAK封裝MOSFET的第二PowerMesh⑩ |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 422K |
| 代理商： | STB6LNC60 |
9/9
STB6LNC60
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subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| STB6LNC60T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.8A I(D) | TO-263AB |
| STB6N52K3 | 功能描述:MOSFET N-Ch 525V 1 Ohm 5A SuperMESH3 Zener RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB6N60M2 | 制造商:STMicroelectronics 功能描述:POWER MOSFET - Tape and Reel 制造商:STMicroelectronics 功能描述:MOSFET N-CH 600V D2PAK 制造商:STMicroelectronics 功能描述:STB6N60M2 Series 600 V 4.5 A 1.2 Ohm N-channel Power MOSFET - TO-263-3 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 600V 4.5A D2PAK 制造商:STMicroelectronics 功能描述:N-channel 600V,1.06Ohm,4.5A Power MOSFET 制造商:STMicroelectronics 功能描述:600V,1.06,4.5A,N-Channel Power MOSFET |
| STB6N62K3 | 功能描述:MOSFET N-Channel Power Mosfet D2PAK RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB6N65M2 | 功能描述:MOSFET N-CH 650V 4A D2PAK 制造商:stmicroelectronics 系列:MDmesh?? 包裝:剪切帶（CT） 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:650V 電流 - 連續(xù)漏極（Id）（25°C 時）:4A（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:1.35 歐姆 @ 2A，10V 不同 Id 時的 Vgs（th）（最大值）:4V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:9.8nC @ 10V 不同 Vds 時的輸入電容（Ciss）:226pF @ 100V 功率 - 最大值:60W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-263-3，D2Pak（2 引線+接片），TO-263AB 供應(yīng)商器件封裝:D2PAK 標(biāo)準(zhǔn)包裝:1 |
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