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參數(shù)資料
| 型號： | STB36NF02LT4 |
| 元件分類： | 熱敏電阻 |
| 英文描述： | THERMISTOR PTC 6V 1.10A RESETABL |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 36A條（?。﹟對263AB |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 205K |
| 代理商： | STB36NF02LT4 |
1/8
PRELIMINARY DATA
June 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STB36NF06L
STP36NF06L
N-CHANNEL 60V - 0.032
- 30A D2PAK/TO-220
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.032
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
APPLICATION ORIENTED
CHARACTERIZATION
I
SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
therefore
a
remarkable
reproducibility.
manufacturing
APPLICATIONS
I
POWER TOOLS
I
AUTOMOTIVE ENVIRONMENT
TYPE
V
DSS
R
DS(on)
I
D
STB36NF06L
STP36NF06L
60 V
60 V
< 0.040
< 0.040
30 A
30 A
1
2
3
TO-220
1
3
D
2
PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB36NF06L
STP36NF06L
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
E
AS(2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
(1) I
SD
≤
30A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 15A, V
DD
= 30V
MARKING
STB36NF06L
STP36NF06L
PACKAGE
TO-263
TO-220
PACKAGING
TAPE & REEL
TUBE
Parameter
Value
60
60
± 18
30
21
120
70
0.47
10
235
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
相關PDF資料 |
PDF描述 |
|---|---|
| STB36NF06L | FUSE,1.5A,RESETTABLE,SMDC150 |
| STP3N100XI | TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 1.6A I(D) | SOT-186VAR |
| STP3N50XI | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 1.7A I(D) | SOT-186VAR |
| STP3N60FI | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2.7A I(D) | TO-220VAR |
| STP3N60XI | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2.4A I(D) | SOT-186VAR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STB36NF03L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.015 ohm - 36A D2PAK LOW GATE CHARGE STripFET POWER MOSFET |
| STB36NF03LT4 | 功能描述:MOSFET N-Ch 30 Volt 36 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB36NF06L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 60V - 0.032 OHM - 30A D2PAK/TO-220 STRIPFET II POWER MOSFET |
| STB36NF06LT4 | 功能描述:MOSFET 60V 0.032Ohm 30A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB36NM60N | 功能描述:MOSFET N-Ch 600V 0.092Ohm 29A MDMesh II MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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