- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374933 > SSM6P26TU (Toshiba Corporation) High Speed Switching Applications PDF資料下載
參數(shù)資料
| 型號： | SSM6P26TU |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Speed Switching Applications |
| 中文描述： | 高速開關(guān)應用 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 159K |
| 代理商： | SSM6P26TU |
SSM6P26TU
2007-11-01
2
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
±
8
V, V
DS
=
0
±
1
μ
A
V
(BR) DSS
I
D
=
-1 mA, V
GS
=
0
-20
Drain-Source breakdown voltage
V
(BR) DSX
I
D
=
-1 mA, V
GS
=
+
8 V
-12
V
Drain cut-off current
I
DSS
V
DS
=
-20 V, V
GS
=
0
-1
μ
A
Gate threshold voltage
V
th
V
DS
=
-3 V, I
D
=
-0.1 mA
-0.5
-1.1
V
Forward transfer admittance
Y
fs
V
DS
=
-3 V, I
D
=
-0.25 A
(Note2)
0.8
1.7
S
I
D
=
-0.25 A, V
GS
=
-4 V
(Note2)
200
230
I
D
=
-0.25 A, V
GS
=
-2.5 V
(Note2)
260
330
Drain-Source on-resistance
R
DS (ON)
I
D
=
-0.25 A, V
GS
=
-1.8 V
(Note2)
400
980
m
Ω
Input capacitance
C
iss
V
DS
=
-10 V, V
GS
=
0, f
=
1 MHz
250
pF
Reverse transfer capacitance
C
rss
V
DS
=
-10 V, V
GS
=
0, f
=
1 MHz
35
pF
Output capacitance
C
oss
V
DS
=
-10 V, V
GS
=
0, f
=
1 MHz
45
pF
Turn-on time
t
on
14
Switching time
Turn-off time
t
off
V
DD
=
-10 V, I
D
=
-0.25 A,
V
GS
=
0~-2.5 V, R
G
=
4.7
Ω
15
ns
Note2: Pulse test
Switching Time Test Circuit
Precaution
V
th
can be expressed as the voltage between gate and source when the low operating current value is I
D
=-100
μ
A for
this product. For normal switching operation, V
GS
(on)
requires a higher voltage than V
th
and V
GS (off)
requires a lower
voltage than V
th.
(The relationship can be established as follows: V
GS (off)
< V
th
< V
GS (on)
)
Please take this into consideration when using the device.
.
V
DD
=
-10 V
R
G
=
4.7
Ω
D.U.
<
1%
V
IN
: t
r
, t
f
<
5 ns
Common Source
Ta
=
25°C
IN
0
2.5V
10
μ
s
V
DD
OUT
R
G
R
L
(c) V
OUT
t
on
90%
10%
2.5 V
0 V
90%
10%
t
off
t
r
t
f
V
DS (ON)
V
DD
(b) V
IN
(a) Test circuit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SSM6P28TU | High-Speed Switching Applications |
| SSM6P54TU | High-Speed Switching Applications |
| SSM9926M | DUAL N CHANNEL ENHANCEMENT MODE POWER MOSFETS |
| SSN3904 | NPN Silicon Transistor |
| SSOP-16 | 16-Lead SSOP Plastic Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SSM6P28TU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Speed Switching Applications |
| SSM6P35FE | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Speed Switching Applications Analog Switch Applications |
| SSM6P35FE(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET DUAL P-CH 20V .1A ES6 |
| SSM6P36FE | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Management Switches |
| SSM6P36TU(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET Pchx2 20V 0.33A 1.31ohm/4.5V UF6 |
發(fā)布緊急采購，3分鐘左右您將得到回復。