參數(shù)資料
型號(hào)： SSM6P15FE
廠商： Toshiba Corporation
英文描述： High Speed Switching Applications
中文描述： 高速開關(guān)應(yīng)用
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 196K
代理商： SSM6P15FE
SSM6P15FE
2007-11-01
2
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 common)
Characteristic
Symbol
Test Condition
MIN.
TYP.
MAX.
UNIT
Gate leakage current
I
GSS
V
GS
=
±
16 V, V
DS
=
0
±
1
μ
A
Drain-Source breakdown voltage
V
(BR) DSS
I
D
=
0.1 mA, V
GS
=
0
30
V
Drain cut-off current
I
DSS
V
DS
=
30 V, V
GS
=
0
1
μ
A
Gate threshold voltage
V
th
V
DS
=
3 V, I
D
=
0.1 mA
1.1
1.7
V
Forward transfer admittance
Y
fs
V
DS
=
3 V, I
D
=
10 mA
20
mS
I
D
=
10 mA, V
GS
=
4 V
8
12
Drain-Source ON resistance
R
DS (ON)
I
D
=
1 mA, V
GS
=
2.5 V
14
32
Ω
Input capacitance
C
iss
9.1
pF
Reverse transfer capacitance
C
rss
3.5
pF
Output capacitance
C
oss
V
DS
=
3 V, V
GS
=
0, f
=
1 MHz
8.6
pF
Turn-on time
t
on
65
Switching time
Turn-off time
t
off
V
DD
=
5 V, I
D
=
10 mA,
V
GS
=
0~
5 V
175
ns
Switching Time Test Circuit
Precaution
V
th
can be expressed as voltage between gate and source when low operating current value is I
D
=
100
μ
A for this
product. For normal switching operation, V
GS
(on)
requires higher voltage than V
th
and V
GS (off)
requires lower
voltage
than V
th
. (Relationship can be established as follows: V
GS (off)
<
V
th
<
V
GS (on)
)
Please take this into consideration for using the device.
V
DD
=
5 V
Duty
<
1%
V
IN
: t
r
, t
f
<
5 ns
(Z
out
=
50
Ω
)
Common Source
Ta
=
25°C
IN
0
5V
10
μ
s
V
DD
OUT
5
Ω
R
L
(c) V
OUT
t
on
90%
10%
5 V
0 V
90%
10%
t
off
t
r
t
f
V
DS (ON)
V
DD
(b) V
IN
(a) Test circuit
相關(guān)PDF資料
PDF描述
SSM6P15FU Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 4.9 to 5.3; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): &#160; ESD (kV) min: -; Package: DO-35
SSM6P16FE Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 2.2 to 2.6; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): &#160; ESD (kV) min: -; Package: DO-35
SSM6P16FU High Speed Switching Applications
SSM6P25TU Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 2.5 to 2.9; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): &#160; ESD (kV) min: -; Package: DO-35
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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SSM6P16FE 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching Applications
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