參數(shù)資料
型號(hào): SSM6N7002FU
廠商: Toshiba Corporation
英文描述: High Speed Switching Applications Analog Switch Applications
中文描述: 高速開關(guān)應(yīng)用模擬開關(guān)應(yīng)用
文件頁數(shù): 1/5頁
文件大?。?/td> 163K
代理商: SSM6N7002FU
SSM6N7002FU
2004-05-07
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N7002FU
High Speed Switching Applications
Analog Switch Applications
Small package
Low ON resistance
: R
on
=
3.3
(max) (@V
GS
=
4.5 V)
: R
on
=
3.2
(max) (@V
GS
=
5 V)
: R
on
=
3.0
(max) (@V
GS
=
10 V)
Maximum Ratings
(Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
60
V
Gate-Source voltage
V
GSS
±
20
V
DC
I
D
200
Drain current
Pulse
I
DP
800
mA
Drain power dissipation (Ta
=
25°C)
P
D
(Note)
300
mW
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note: Total rating, mounted on FR4 board
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 0.32mm
2
×
6)
Marking
Equivalent Circuit
(top view)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-2J1C
NC
6
5
4
1
2
3
Q1
Q2
6
5
4
1
2
3
0.4 mm
0
1.SOURCE1
2.GATE1
3.DRAIN2
4.SOURCE2
5.GATE2
6.DRAIN1
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