- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄374933 > SSM6N7002FU_07 (Toshiba Corporation) High Speed Switching Applications PDF資料下載
參數(shù)資料
| 型號(hào)： | SSM6N7002FU_07 |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Speed Switching Applications |
| 中文描述： | 高速開(kāi)關(guān)應(yīng)用 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 174K |
| 代理商： | SSM6N7002FU_07 |
SSM6N7002FU
2007-11-01
2
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Gate leakage current
I
GSS
V
GS
=
±
20 V, V
DS
= 0
±
10
μ
A
Drain-Source breakdown voltage
V
(BR) DSS
I
D
=
0.1 mA, V
GS
= 0
60
V
Drain cut-off current
I
DSS
V
DS
= 60 V, V
GS
= 0
1
μ
A
Gate threshold voltage
V
th
V
DS
=
10 V, I
D
=
0.25 mA
1.0
2.5
V
Forward transfer admittance
Y
fs
V
DS
=
10 V, I
D
= 200 mA
170
mS
I
D
=
500 mA, V
GS
=
10 V
2.0
3.0
I
D
=
100 mA, V
GS
= 5 V
2.1
3.2
Drain-Source ON resistance
R
DS (ON)
I
D
=
100 mA, V
GS
= 4.5 V
2.2
3.3
Ω
Input capacitance
C
iss
17
pF
Reverse transfer capacitance
C
rss
1.4
pF
Output capacitance
C
oss
V
DS
= 25 V, V
GS
= 0, f = 1 MHz
5.8
pF
Turn-on delay time
td
(on)
2.4
4.0
Switching time
Turn-off delay time
td
(off)
V
DD
= 30V, I
D
=
200 mA,
V
GS
= 0 ~ 10V
26
40
ns
Switching Time Test Circuit
Precaution
V
th
can be expressed as voltage between gate and source when low operating current value is I
D
=250
μ
A for this
product. For normal switching operation, V
GS
(on)
requires higher voltage than V
th
and V
GS (off)
requires lower voltage
than V
th
. (Relationship can be established as follows: V
GS (off)
<
V
th
<
V
GS (on)
)
Please take this into consideration for using the device.
V
DD
= 30 V
Duty
<
1%
V
IN
: t
r
, t
f
<
2 ns
(Z
out
= 50
Ω
)
Common Source
Ta = 25°C
IN
V
DD
OUT
5
Ω
R
L
(c) V
OUT
(b) V
IN
(a) Test circuit
10V
0
10
μ
s
td
(on)
90%
10%
0 V
10 V
10%
90%
td
(off)
t
r
t
f
V
DD
V
DS (ON)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SSM6N7002FU | High Speed Switching Applications Analog Switch Applications |
| SSM6P05FU | Power Management Switch High Speed Switching Applications |
| SSM6P09FU | High Speed Switching Applications |
| SSM6P15FE | High Speed Switching Applications |
| SSM6P15FU | Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 4.9 to 5.3; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SSM6N7002FUTE85LF | 功能描述:MOSFET SMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6P05FU | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Power Management Switch |
| SSM6P05FU(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述: |
| SSM6P05FU(TE85LF) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P CH 0.2A 20V SOT23 |
| SSM6P05FU_07 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Power Management Switch |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。