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參數(shù)資料
| 型號： | SSM6N15FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Speed Switching Applications |
| 中文描述： | 高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 186K |
| 代理商： | SSM6N15FE |
SSM6N15FE
2007-11-01
2
Electrical Characteristics
(Ta
=
25°C) (Q1, Q2 Common)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
±
16 V, V
DS
=
0
±
1
μ
A
Drain-Source breakdown voltage
V
(BR) DSS
I
D
=
0.1 mA, V
GS
=
0
30
V
Drain cut-off current
I
DSS
V
DS
=
30 V, V
GS
=
0
1
μ
A
Gate threshold voltage
V
th
V
DS
=
3 V, I
D
=
0.1 mA
0.8
1.5
V
Forward transfer admittance
Y
fs
V
DS
=
3 V, I
D
=
10 mA
25
mS
I
D
=
10 mA, V
GS
=
4 V
2.2
4.0
Drain-Source ON resistance
R
DS (ON)
I
D
=
10 mA, V
GS
=
2.5 V
4.0
7.0
Ω
Input capacitance
C
iss
7.8
pF
Reverse transfer capacitance
C
rss
3.6
pF
Output capacitance
C
oss
V
DS
=
3 V, V
GS
=
0, f
=
1 MHz
8.8
pF
Turn-on time
t
on
50
Switching time
Turn-off time
t
off
V
DD
=
5 V, I
D
=
10 mA,
V
GS
=
0~5 V
180
ns
Switching Time Test Circuit
Precaution
V
th
can be expressed as voltage between gate and source when low operating current value is I
D
=
100
μ
A for this
product. For normal switching operation, V
GS
(on)
requires higher voltage than V
th
and V
GS (off)
requires lower
voltage than V
th
. (Relationship can be established as follows: V
GS (off)
<
V
th
<
V
GS (on)
)
Please take this into consideration for using the device.
(c) V
OUT
(b) V
IN
t
on
90%
10%
0 V
5 V
10%
90%
t
off
t
r
t
f
V
DD
V
DS (ON)
V
DD
=
5 V
Duty
<
1%
V
IN
: t
r
, t
f
<
5 ns
(Z
out
=
50
Ω
)
Common Source
Ta
=
25°C
V
DD
OUT
IN
5 V
0
10
μ
s
5
Ω
R
L
(a) Test circuit
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