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參數(shù)資料
| 型號： | SSM6N04FU |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 中文描述： | 東芝場效應(yīng)晶體管硅?頻道馬鞍山類型 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 175K |
| 代理商： | SSM6N04FU |
SSM6N04FU
2003-03-28
2
Electrical Characteristics
(Ta 25°C) (Q1, Q2 common)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
10 V, V
DS
0
15
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
100 A, V
GS
0
20
V
Drain cut-off current
I
DSS
V
DS
20 V, V
GS
0
1
A
Gate threshold voltage
V
th
V
DS
3 V, I
D
0.1 mA
0.7
1.3
V
Forward transfer admittance
Y
fs
V
DS
3 V, I
D
10 mA
25
50
mS
Drain-source ON resistance
R
DS (ON)
I
D
10 mA, V
GS
2.5 V
4
12
Input capacitance
C
iss
V
DS
3 V, V
GS
0, f 1 MHz
11.0
pF
Reverse transfer capacitance
C
rss
V
DS
3 V, V
GS
0, f 1 MHz
3.3
pF
Output capacitance
C
oss
V
DS
3 V, V
GS
0, f 1 MHz
9.3
pF
Turn-on time
t
on
V
DD
3 V, I
D
10 mA, V
GS
0~2.5 V
0.16
Switching time
Turn-off time
t
off
V
DD
3 V, I
D
10 mA, V
GS
0~2.5 V
0.19
s
Gate-source resistor
R
GS
V
GS
0~10 V
0.7
1.0
1.3
M
Switching Time Test Circuit
(a)
Test circuit
(b)
V
IN
V
GS
(c)
V
OUT
V
DS
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