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參數(shù)資料
| 型號： | SSM6N03FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Speed Switching Applications |
| 中文描述： | 高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 153K |
| 代理商： | SSM6N03FE |
SSM6N03FE
2007-11-01
3
(Q1, Q2 Common)
F
Y
f
D
D
Drain-source voltage V
DS
(V)
I
D
– V
DS
D
D
Drain-source voltage V
DS
(V)
I
D
– V
DS
(Low voltage region)
D
D
Drain-source voltage V
DS
(V)
I
DR
– V
DS
D
D
Gate-source voltage V
GS
(V)
I
D
– V
GS
Drain current I
D
(mA)
Y
fs
– I
D
Drain-source voltage V
DS
(V)
C – V
DS
C
Common Source
VDS
=
3 V
Ta
=
25°C
5
1
300
100
3
5
10
30
50
10
30
50
100
Common Source
VGS
=
0
f
=
1 MHz
Ta
=
25°C
100
1
0.1
30
Ciss
Coss
Crss
0.3
1
3
10
3
5
10
30
50
Common Source
VDS
=
3 V
1000
0.01
0
3
25°C
25°C
Ta
=
100°C
0.5
1
1.5
2
2.5
0.1
1
10
100
100
0
0
Common Source
Ta
=
25°C
1.8
4.0
VGS
=
1.4 V
1.6
2.2
2.0
2.5
20
40
60
80
0.2
0.4
0.6
0.8
1.0
0
0
Common Source
Ta
=
25°C
1.8
1.9
VGS
=
1.4 V
100
1.6
1.7
2.0
2.5
2
4
6
8
10
20
40
60
80
0.01
0
100
1.2
1.0
0.8
0.6
0.4
0.2
0.1
1
10
Common Source
VGS
=
0
Ta
=
25°C
IDR
D
G
S
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|---|---|
| SSM6N04FU | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| SSM6N05FU | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| SSM6N09FU_07 | High Speed Switching Applications |
| SSM6N09FU | High Speed Switching Applications |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SSM6N03FE(TE85L,F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 20V 0.1A 6-Pin ES T/R |
| SSM6N03FE_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching Applications |
| SSM6N04FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switch Applications |
| SSM6N04FU_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switch Applications |
| SSM6N05FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching Applications |
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