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參數(shù)資料
| 型號： | SSM6N03FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Speed Switching Applications |
| 中文描述： | 高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 153K |
| 代理商： | SSM6N03FE |
SSM6N03FE
2007-11-01
2
Electrical Characteristics
(Ta
=
25°C) (Q1, Q2 Common)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
10 V, V
DS
=
0 V
1
μ
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
=
100
μ
A, V
GS
=
0 V
20
V
Drain cut-off current
I
DSS
V
DS
=
20 V, V
GS
=
0 V
1
μ
A
Gate threshold voltage
V
th
V
DS
=
3 V, I
D
=
0.1 mA
0.7
1.3
V
Forward transfer admittance
|Y
fs
|
V
DS
=
3 V, I
D
=
10 mA
25
60
mS
Drain-source ON resistance
R
DS (ON)
I
D
=
10 mA, V
GS
=
2.5 V
4
12
Ω
Input capacitance
C
iss
V
DS
=
3 V, V
GS
=
0 V, f
=
1 MHz
11.0
pF
Reverse transfer capacitance
C
rss
V
DS
=
3 V, V
GS
=
0 V, f
=
1 MHz
3.3
pF
Output capacitance
C
oss
V
DS
=
3 V, V
GS
=
0 V, f
=
1 MHz
9.3
pF
Turn-on time
t
on
V
DD
=
3 V, I
D
=
10 mA,
V
GS
=
0~2.5 V
0.16
Switching time
Turn-off time
t
off
V
DD
=
3 V, I
D
=
10 mA,
V
GS
=
0~2.5 V
0.19
μ
s
Switching Time Test Circuit
Precaution
V
th
can be expressed as voltage between gate and source when low operating current value is I
D
=
100
μ
A for this
product. For normal switching operation, V
GS
(on)
requires higher voltage than V
th
and V
GS (off)
requires lower
voltage than V
th
. (Relationship can be established as follows: V
GS (off)
<
V
th
<
V
GS (on)
)
Please take this into consideration for using the device.
t
on
t
off
(b) V
IN
V
GS
(c) V
OUT
V
DS
2.5 V
0
V
DD
V
DS (ON)
t
r
t
f
10%
90%
90%
10%
(a) Test circuit
2.5 V
0
I
D
Input
Output
V
DD
10
μ
s
V
IN
5
Ω
R
L
V
DD
=
3 V
D.U.
<
1%
Input: t
r
, t
f
<
5 ns
(Z
out
=
50
Ω
)
Common Source
Ta
=
25°C
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