參數(shù)資料
型號: SSM6N03FE
廠商: Toshiba Corporation
英文描述: High Speed Switching Applications
中文描述: 高速開關(guān)應(yīng)用
文件頁數(shù): 1/5頁
文件大小: 153K
代理商: SSM6N03FE
SSM6N03FE
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N03FE
High Speed Switching Applications
Analog Switch Applications
Input impedance is high. Driving current is extremely low.
Can be directly driven by a CMOS device even at low voltage due to
low gate threshold voltage.
High-speed switching.
Housed in a ultra-small package which is suitable for high density
mounting.
Absolute Maximum Ratings
(Ta
=
25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DS
V
GSS
20
V
Gate-source voltage
10
V
Drain current
I
D
100
mA
Drain power dissipation
P
D
(Note 1)
150
mW
Channel temperature
T
ch
150
°C
Storage temperature
T
stg
55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 0.135 mm
2
×
6)
Equivalent Circuit
(top view)
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
2-2N1D
Weight: g (typ.)
0.3 mm
0
D A
6 PIN
5 PIN
4 PIN
1 PIN
2 PIN
3 PIN
Q1
Q2
6 PIN
5 PIN
4 PIN
1 PIN
2 PIN
3 PIN
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