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參數(shù)資料
| 型號： | SSM6L11TU |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Speed Switching Applications |
| 中文描述： | 高速開關應用 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 209K |
| 代理商： | SSM6L11TU |
SSM6L11TU
2007-11-01
1
1.Source1
2.Gate1
3.Drain2
4.Source2
5.Gate2
6.Drain1
0
6
1.7±0.1
2.1±0.1
1
1
2
0
0
3
2
UF6
0
5
4
+
0
+
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type
SSM6L11TU
High Speed Switching Applications
Optimum for high-density mounting in small packages
Low on-resistance
Q1:
R
on
= 395m
(max) (@V
GS
= 1.8 V)
Q2:
R
on
= 430m
(max) (@V
GS
= -2.5 V)
Q1 Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
V
GSS
I
D
20
V
Gate-Source voltage
±
12
V
DC
0.5
Drain current
Pulse
I
DP
1.5
A
Q2 Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
V
GSS
I
D
-20
V
Gate-Source voltage
±
12
V
DC
-0.5
Drain current
Pulse
I
DP
-1.5
A
Absolute Maximum Ratings
(Q1,Q2 Common)
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain power dissipation
P
D
(Note 1)
T
ch
500
mW
Channel temperature
150
°
C
Storage temperature range
T
stg
55~150
°
C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board. (total dissipation)
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Marking
Equivalent Circuit
(top view)
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2T1B
Weight: 7.0 mg (typ.)
Q1
Q2
6
5
4
1
2
3
6
K8
4
1
2
3
5
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| SSM6N03FE_07 | High Speed Switching Applications |
| SSM6N03FE | High Speed Switching Applications |
| SSM6N04FU | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SSM6L11TU(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSF N/P CH 20V 100MA UF6 S 制造商:Toshiba America Electronic Components 功能描述:S-MOS,Nch+Pch,Vds=+/-20V,Id=+/-500mA,UF6 |
| SSM6L11TU_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching Applications |
| SSM6L12TU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Speed Switching Applications |
| SSM6L12TU(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:S-MOS,Nch+Pch,Vds=+/-30V,Id=+/-500mA,UF6 |
| SSM6L13TU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type |
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