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參數(shù)資料
| 型號： | SSM6L05FU |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type |
| 中文描述： | 東芝場效應(yīng)晶體管硅N / P系列頻道馬鞍山類型 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 205K |
| 代理商： | SSM6L05FU |
SSM6L05FU
2002-01-17
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Marking
Equivalent Circuit
(top view)
Q1 Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
12 V, V
DS
0
1
A
Drain-Source breakdown voltage
V
(BR) DSS
I
D
1 mA, V
GS
0
20
V
Drain cut-off current
I
DSS
V
DS
20 V, V
GS
0
1
A
Gate threshold voltage
V
th
V
DS
3 V, I
D
0.1 mA
0.6
1.1
V
Forward transfer admittance
Y
fs
V
DS
3 V, I
D
200 mA
(Note2)
350
mS
I
D
200 mA, V
GS
4 V
(Note2)
0.6
0.8
Drain-Source ON resistance
R
DS (ON)
I
D
200 mA, V
GS
2.5 V (Note2)
0.85
1.2
Input capacitance
C
iss
22
pF
Reverse transfer capacitance
C
rss
9
pF
Output capacitance
C
oss
V
DS
3 V, V
GS
0, f 1 MHz
21
pF
Turn-on time
t
on
60
Switching time
Turn-off time
t
off
V
DD
3 V, I
D
100 mA,
V
GS
0~2.5 V
70
ns
Note2: Pulse test
Switching Time Test Circuit
(Q1: Nch MOS FET)
K 4
6
5
4
1
2
3
Q1
Q2
6
5
4
1
2
3
(c) V
OUT
V
DD
3 V
Duty
V
IN
: t
r
, t
f
5 ns
(Z
out
50 )
Common Source
Ta 25°C
1%
V
DD
OUT
IN
2.5 V
0
10 s
5
R
L
(b) V
IN
t
on
90%
10%
0 V
2.5 V
10%
90%
t
off
t
r
t
f
V
DD
V
DS (ON)
(a) Test circuit
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