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參數(shù)資料
| 型號： | SSM6K30FE |
| 廠商： | Toshiba Corporation |
| 元件分類： | DC/DC變換器 |
| 英文描述： | Field Effect Transistor Silicon P Channel MOS Type (バ-MOSザ) High speed switching DC-DC Converter |
| 中文描述： | 場效應晶體管硅P通道馬鞍山類型（バ-馬鞍山ザ）高速開關DC - DC轉換器 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 283K |
| 代理商： | SSM6K30FE |
SSM6K30FE
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (
Π
-MOS
Ⅶ
)
SSM6K30FE
○
High speed switching
○
DC-DC Converter
Small package
Low R
DS (ON)
High speed switching
Absolute Maximum Ratings
(Ta
=
25°C) MOSFET
: R
on
= 210 m
(max) (@V
GS
= 10 V)
: R
on
= 420 m
(max) (@V
GS
= 4 V)
: t
on
= 19 ns (typ)
: t
off
= 10 ns (typ)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
20
V
Gate-Source voltage
V
GSS
±
20
V
DC
I
D
1.2
Drain current
Pulse
I
DP
2.4
A
Drain power dissipation
P
D
(Note 1)
500
mW
Channel temperature
T
ch
150
°
C
Storage temperature
T
stg
55~150
°
C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm
×
25.4 mm
×
1.6 t, Cu pad: 645 mm
2
)
Marking
Equivalent Circuit
(top view)
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the
environment is protected against static electricity. Operators should wear anti-static clothing, and containers
and other objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
1,2,5,6
: Drain
3
: Gate
4 : Source
JEDEC
―
JEITA
―
TOSHIBA
2-2N1A
Weight: 3 mg (typ.)
6
KA
4
1
2
3
5
4
1
2
3
6
5
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SSM6K30FE(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET Nch 20V 1.2A 0.21ohm/10V ES6 |
| SSM6K31FE | 功能描述:MOSFET Vds=30V Id=2.3A 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6K31FE(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET Nch 20V 1.2A 0.32ohm/10V ES6 |
| SSM6K32TU | 功能描述:MOSFET INCORRECT MOUSER P/N 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6K32TU(TE85L,F) | 功能描述:MOSFET Vds=60V Id=2A 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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