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參數(shù)資料
| 型號(hào)： | SSM6K25FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Speed Switching Applications |
| 中文描述： | 高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 166K |
| 代理商： | SSM6K25FE |
SSM6K25FE
2007-11-01
2
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
±
12V, V
DS
=
0
±
1
μ
A
V
(BR) DSS
I
D
=
1 mA, V
GS
=
0
20
Drain-Source breakdown voltage
V
(BR) DSX
I
D
=
1 mA, V
GS
=
12 V
10
V
Drain cut-off current
I
DSS
V
DS
=
20 V, V
GS
=
0
1
μ
A
Gate threshold voltage
V
th
V
DS
=
3 V, I
D
=
0.1 mA
0.5
1.1
V
Forward transfer admittance
Y
fs
V
DS
=
3 V, I
D
=
0.25 A
(Note2)
1.2
2.4
S
I
D
=
0.25 A, V
GS
=
4.0 V
(Note2)
125
145
I
D
=
0.25 A, V
GS
=
2.5 V
(Note2)
150
190
Drain-Source on-resistance
R
DS (ON)
I
D
=
0.25 A, V
GS
=
1.8 V
(Note2)
200
395
m
Ω
Input capacitance
C
iss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
268
pF
Reverse transfer capacitance
C
rss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
34
pF
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
44
pF
Turn-on time
t
on
11
Switching time
Turn-off time
t
off
V
DD
=
10 V, I
D
=
0.25 A,
V
GS
=
0~2.5 V, R
G
=
4.7
Ω
15
ns
Note2: Pulse test
Switching Time Test Circuit
(a) Test Circuit
(b) V
IN
Precaution
V
th
can be expressed as the voltage between gate and source when the low operating current value is I
D
=100
μ
A for
this product. For normal switching operation, V
GS
(on)
requires a higher voltage than V
th
and V
GS (off)
requires a lower
voltage than V
th.
(The relationship can be established as follows: V
GS (off)
< V
th
< V
GS (on)
)
Please take this into consideration when using the device.
(c) V
OUT
V
DD
=
10 V
R
G
=
4.7
Ω
D.U.
<
1%
V
IN
: t
r
, t
f
<
5 ns
Common Source
Ta
=
25°C
V
DD
OUT
IN
2.5 V
0
10
μ
s
R
G
t
f
t
on
90%
10%
2.5 V
0 V
10%
90%
t
off
t
r
V
DD
V
DS (ON)
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| SSM6K30FE(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET Nch 20V 1.2A 0.21ohm/10V ES6 |
| SSM6K31FE | 功能描述:MOSFET Vds=30V Id=2.3A 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6K31FE(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET Nch 20V 1.2A 0.32ohm/10V ES6 |
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