參數(shù)資料
型號(hào)： SSM6K203FE
廠商： Toshiba Corporation
英文描述： High-Speed Switching Applications
中文描述： 高速開關(guān)應(yīng)用
文件頁數(shù)： 1/7頁
文件大?。?/td> 201K
代理商： SSM6K203FE
SSM6K203FE
2007-11-01
1
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K203FE
○
High-Speed Switching Applications
○
Power Management Switch Applications
1.5 V drive
Low ON-resistance:
R
on
= 153 m
(max) (@V
GS
= 1.5V)
R
on
= 106 m
(max) (@V
GS
= 1.8V)
R
on
= 76 m
(max) (@V
GS
= 2.5V)
R
on
= 61 m
(max) (@V
GS
= 4.0V)
Absolute Maximum Ratings (Ta = 25
C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
V
DSS
V
GSS
I
D
I
DP
P
D
(Note 1)
20
V
Gate–source voltage
±
10
V
DC
2.8
Drain current
Pulse
5.6
A
Drain power dissipation
500
mW
Channel temperature
T
ch
T
stg
150
°
C
°
C
Storage temperature
55 to 150
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
Y
fs
I
D
=
1 mA, V
GS
=
0 V
I
D
=
1 mA, V
GS
=
–10 V
V
DS
=
20 V, V
GS
=
0 V
V
GS
=
±
10 V, V
DS
=
0 V
V
DS
=
3 V, I
D
=
1 mA
V
DS
=
3 V, I
D
=
2.0 A
I
D
=
2.0 A, V
GS
=
4.0 V
I
D
=
2.0 A, V
GS
=
2.5 V
I
D
=
1.0 A, V
GS
=
1.8 V
I
D
=
0.5 A, V
GS
=
1.5 V
20
12
0.35
5.3
10.5
49
59
73
88
400
68
60
5.9
4.1
1.8
14
15
– 0.85
1
±
1
1.0
61
76
106
153
– 1.2
V
V
μ
A
μ
A
V
S
Drain–source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
(Note2)
(Note2)
(Note2)
(Note2)
(Note2)
Drain–source ON-resistance
R
DS (ON)
m
Ω
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate
Source Charge
Gate
Drain Charge
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
on
t
off
V
DSF
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
pF
V
DS
= 10 V, I
D
= 2.8 A
V
GS
= 4 V
nC
Turn-on time
Turn-off time
Switching time
V
DD
=
10 V, I
D
=
2 A,
V
GS
=
0 to 2.5 V, R
G
=
4.7
Ω
I
D
=
2.8 A, V
GS
=
0 V (Note2)
ns
Drain–source forward voltage
V
Note 2: Pulse test
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2N1A
Weight: 3 mg (typ.)
ES6
1, 2, 5, 6 : Drain
3 : Gate
4 : Source
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