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參數(shù)資料
| 型號(hào)： | SSM6K08FU |
| 廠商： | Toshiba Corporation |
| 英文描述： | CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category |
| 中文描述： | CategoryTOSHIBA場(chǎng)效應(yīng)晶體管硅?頻道馬鞍山型（U型MOSII）/分類 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 160K |
| 代理商： | SSM6K08FU |
SSM6K08FU
2002-01-24
2
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
12 V, V
DS
0
1
A
V
(BR) DSS
I
D
1 mA, V
GS
0
20
Drain-Source breakdown voltage
V
(BR) DSX
I
D
1 mA, V
GS
12 V
12
V
Drain cut-off current
I
DSS
V
DS
20 V, V
GS
0
1
A
Gate threshold voltage
V
th
V
DS
3 V, I
D
0.1 mA
0.5
1.2
V
Forward transfer admittance
Y
fs
V
DS
3 V, I
D
0.8 A
(Note2)
2.0
S
I
D
0.8 A, V
GS
4 V
(Note2)
77
105
I
D
0.8 A, V
GS
2.5 V
(Note2)
100
140
Drain-Source ON resistance
R
DS (ON)
I
D
0.8 A, V
GS
2.0 V
(Note2)
125
210
m
Input capacitance
C
iss
V
DS
10 V, V
GS
0, f 1 MHz
306
pF
Reverse transfer capacitance
C
rss
V
DS
10 V, V
GS
0, f 1 MHz
44
pF
Output capacitance
C
oss
V
DS
10 V, V
GS
0, f 1 MHz
74
pF
Turn-on time
t
on
16
Switching time
Turn-off time
t
off
V
DD
10 V, I
D
0.8 A,
V
GS
0~2.5 V, R
G
4.7
15
ns
Note2: Pulse test
Switching Time Test Circuit
(a) Test Circuit
(b) V
IN
Precaution
V
th
can be expressed as voltage between gate and source when low operating current value is I
D
100 A for this
product. For normal switching operation, V
GS
(on)
requires higher voltage than V
th
and V
GS (off)
requires lower
voltage than V
th.
(Relationship can be established as follows: V
GS (off)
V
th
V
GS (on)
)
Please take this into consideration for using the device. V
GS
recommended voltage of 2.5 V or higher to turn on
this product.
(c) V
OUT
V
DD
10 V
R
G
4.7
D.U.
V
IN
: t
r
, t
f
5 ns
Common Source
Ta 25°C
1%
V
DD
OUT
IN
2.5 V
0
10 s
R
G
t
f
t
on
90%
10%
2.5 V
0 V
10%
90%
t
off
t
r
V
DD
V
DS (ON)
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| SSM6K18TU | 功能描述:MOSFET INCORRECT MOUSER P/N 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6K18TU(TE85L,F) | 功能描述:MOSFET Vds=20V Id=4A 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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