參數(shù)資料
型號： SSM6J51TU
廠商： Toshiba Corporation
英文描述： High Current Switching Applications
中文描述： 高電流開關(guān)應(yīng)用
文件頁數(shù)： 2/6頁
文件大?。?/td> 235K
代理商： SSM6J51TU
SSM6J51TU
2007-11-01
2
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
±
8 V, V
DS
=
0
±
10
μ
A
V
(BR) DSS
I
D
=
1 mA, V
GS
=
0
12
Drain-Source breakdown voltage
V
(BR) DSX
I
D
=
1 mA, V
GS
=
+8 V
4
V
Drain cut-off current
I
DSS
V
DS
=
12 V, V
GS
=
0
10
μ
A
Gate threshold voltage
V
th
V
DS
=
3 V, I
D
=
1 mA
0.3
1.0
V
Forward transfer admittance
Y
fs
V
DS
=
3 V, I
D
=
2.0 A
(Note 2)
6.0
12.0
S
I
D
=
2.0
A, V
GS
=
2.5
V
(Note 2)
38
54
I
D
=
1.0 A, V
GS
=
1.8
V
(Note 2)
48
85
Drain-Source on-resistance
R
DS (ON)
I
D
=
0.3 A, V
GS
=
1.5 V
(Note 2)
60
150
m
Ω
Input capacitance
C
iss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
1700
Reverse transfer capacitance
C
rss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
190
pF
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
210
pF
Turn-on time
t
on
57
Switching time
Turn-off time
t
off
V
DS
=
10 V, I
D
=
2.0 A,
V
GS
=
0~
2.5 V, R
G
=
4.7
Ω
120
ns
Note 2: Pulse test
Switching Time Test Circuit
(a) Test Circuit
(b) V
IN
Precaution
V
th
can be expressed as the voltage between the gate and source when the low operating current value is I
D
=
-1mA for this product. For normal switching operation, V
GS (on)
requires a higher voltage than V
th
and V
GS (off)
requires a lower voltage than V
th
. (The relationship can be established as follows: V
GS (off)
<
V
th
<
V
GS (on).
)
Be sure to take this into consideration when using the device.
(c) V
OUT
V
DD
=
-10 V
R
G
=
4.7
Ω
D.U.
<
1%
V
IN
: t
r
, t
f
<
5 ns
Common Source
Ta
=
25°C
V
DD
out
in
0
2.5 V
10
μ
s
R
G
I
D
t
f
t
on
90%
10%
0 V
2.5 V
90%
10%
t
off
t
r
V
DS (ON)
V
DD
相關(guān)PDF資料
PDF描述
SSM6J53FE High-Speed Switching Applications
SSM6K06FU High Speed Switching Applications
SSM6K07FU DC-DC Converters High Speed Switching Applications
SSM6K08FU CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category
SSM6K18TU High Current Switching Applications
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SSM6J51TU(TE85L,F) 制造商:Toshiba 功能描述:Trans MOSFET P-CH 12V 4A 6-Pin UF T/R 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 12V 4A UF6 制造商:Toshiba America Electronic Components 功能描述:MOSFET Pch 12V 4A 0.054ohm/2.5V UF6
SSM6J51TUTE85LF 功能描述:MOSFET Vds=-12V Id=-4A 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSM6J53FE 功能描述:MOSFET Vds=-20V Id=1.8A 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSM6J53FE(TE85L,F) 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 20V 1.8A ES6 制造商:Toshiba America Electronic Components 功能描述:MOSFET Pch 20V 1.8A 0.136ohm/2.5V ES6
SSM6J53FETE85LF 功能描述:MOSFET Singel P-ch 20V 1.8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*