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參數(shù)資料
| 型號： | SSM6J26FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Speed Switching Applications |
| 中文描述： | 高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 165K |
| 代理商： | SSM6J26FE |
SSM6J26FE
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
SSM6J26FE
High Speed Switching Applications
Optimum for high-density mounting in small packages
Low on-resistance:
R
on
= 230m
(max) (@V
GS
= -4 V)
R
on
= 330m
(max) (@V
GS
= -2.5 V)
R
on
= 980m
(max) (@V
GS
= -1.8 V)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
-20
V
Gate-Source voltage
V
GSS
±
8
V
DC
I
D
-0.5
Drain current
Pulse
I
DP
-1.5
A
Drain power dissipation
P
D
(Note 1)
500
mW
Channel temperature
T
ch
150
°
C
Storage temperature range
T
stg
55~150
°
C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Marking Equivalent Circuit
(top view)
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
ES6
JEDEC
―
JEITA
―
TOSHIBA
2-2N1A
Weight: 3.0 mg (typ.)
6
PI
4
1
2
3
5
4
1
2
3
6
5
0
6
1.2±0.05
1.6±0.05
1
1
2
0
0
3
1
0
5
4
0
1,2,5,6 :Drain
3 :Gate
4 :Source
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