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參數(shù)資料
| 型號(hào)： | SSM6J23FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Current Switching Applications |
| 中文描述： | 高電流開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 296K |
| 代理商： | SSM6J23FE |
SSM6J23FE
2007-11-01
2
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
±
8 V, V
DS
=
0
±
1
μ
A
V
(BR) DSS
I
D
=
-1 mA, V
GS
=
0
-12
Drain-Source breakdown voltage
V
(BR) DSX
I
D
=
-1 mA, V
GS
=
+
8
V
-4
V
Drain cut-off current
I
DSS
V
DS
=
-12 V, V
GS
=
0
-1
μ
A
Gate threshold voltage
V
th
V
DS
=
-3 V, I
D
=
-0.1 mA
-0.5
-1.1
V
Forward transfer admittance
Y
fs
V
DS
=
-3 V, I
D
=
-0.6A
(Note2)
1.75
3.5
S
I
D
=
-0.6 A, V
GS
=
-4 V
(Note2)
110
160
Drain-Source on-resistance
R
DS (ON)
I
D
=
-0.6 A, V
GS
=
-2.5 V
(Note2)
145
210
m
Ω
Input capacitance
C
iss
V
DS
=
-10 V, V
GS
=
0, f
=
1 MHz
420
pF
Reverse transfer capacitance
C
rss
V
DS
=
-10 V, V
GS
=
0, f
=
1 MHz
75
pF
Output capacitance
C
oss
V
DS
=
-10 V, V
GS
=
0, f
=
1 MHz
93
pF
Turn-on time
t
on
23
Switching time
Turn-off time
t
off
V
DD
=
10 V, I
D
=
0.6A
V
GS
=
0~
2.5 V, R
G
=
4.7
Ω
30
ns
Note2: Pulse test
Switching Time Test Circuit
(a) Test Circuit
(b) V
IN
Precaution
V
th
can be expressed as the voltage between gate and source when the low operating current value is I
D
=
100
μ
A
for this product. For normal switching operation, V
GS
(on)
requires a higher voltage than V
th
and V
GS (off)
requires
a lower voltage than V
th
. (The relationship can be established as follows: V
GS (off)
<
V
th
<
V
GS (on)
)
Please take this into consideration when using the device.
(c) V
OUT
V
DD
=
-10 V
R
G
=
4.7
Ω
D.U.
<
1%
V
IN
: t
r
, t
f
<
5 ns
Common Source
Ta
=
25°C
V
DD
out
in
0
2.5 V
10
μ
s
R
G
I
D
t
f
t
on
90%
10%
0 V
2.5 V
90%
10%
t
off
t
r
V
DS (ON)
V
DD
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| SSM6J25FE | 功能描述:MOSFET INCORRECT MOUSER P/N 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6J25FE(TE85L,F) | 功能描述:MOSFET Vds=-20V Id=500mA 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6J26FE | 功能描述:MOSFET INCORRECT MOUSER P/N 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6J26FE(TE85L,F) | 功能描述:MOSFET Vds=-20V Id=500mA 6Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6J401TU(TE85L,F | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-ch 30V 2.5A Small-Signal UF6 |
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