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參數(shù)資料
| 型號： | SSM6J07FU |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon P Channel MOS Type |
| 中文描述： | 東芝晶體硅P通道馬鞍山類型 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 146K |
| 代理商： | SSM6J07FU |
SSM6J07FU
2002-01-24
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
16 V, V
DS
0
1
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
1 mA, V
GS
0
30
V
Drain cut-off current
I
DSS
V
DS
30 V, V
GS
0
1
A
Gate threshold voltage
V
th
V
DS
5 V, I
D
0.1 mA
1.1
1.8
V
Forward transfer admittance
Y
fs
V
DS
5 V, I
D
0.4 A
(Note2)
0.7
S
I
D
0.4 A, V
GS
10 V
(Note2)
350
450
I
D
0.4 A, V
GS
4 V
(Note2)
570
800
m
Drain-source ON resistance
R
DS (ON)
I
D
0.4 A, V
GS
3.3 V
(Note2)
0.7
1.6
Input capacitance
C
iss
V
DS
15 V, V
GS
0, f 1 MHz
130
pF
Reverse transfer capacitance
C
rss
V
DS
15 V, V
GS
0, f 1 MHz
16
pF
Output capacitance
C
oss
V
DS
15 V, V
GS
0, f 1 MHz
52
pF
Turn-on time
t
on
28
ns
Switching time
Turn-off time
t
off
V
DD
15 V, I
D
0.4 A,
V
GS
0~ 4 V, R
G
10
38
ns
Note 2: Pulse test
Switching Time Test Circuit
(a) Test circuit
(b) V
IN
Precaution
V
th
can be expressed as voltage between gate and source when low operating current value is I
D
1
00 A for this
product. For normal switching operation, V
GS
(on)
requires higher voltage than V
th
and V
GS
(off) requires lower
voltage than Vth.
(relationship can be established as follows: V
GS (off)
V
th
V
GS (on)
)
Please take this into consideration for using the device.
V
GS
recommended voltage of 4.0 V or higher to turn on this product.
V
DD
15 V
R
G
10
D.U.
Input: t
r
, t
f
5 ns
Common source
Ta 25°C
1%
(c) V
OUT
V
DD
Output
Input
0
4 V
10 s
R
G
t
f
t
on
90%
10%
0 V
4 V
90%
10%
t
off
t
r
V
DS (ON)
V
DD
I
D
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| SSM6J08FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) |
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