參數(shù)資料
型號(hào): SSM5P16FE
廠商: Toshiba Corporation
英文描述: High Speed Switching Applications
中文描述: 高速開關(guān)應(yīng)用
文件頁數(shù): 1/5頁
文件大?。?/td> 186K
代理商: SSM5P16FE
SSM5P16FE
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM5P16FE
High Speed Switching Applications
Analog Switch Applications
Small package
Low on-resistance
: R
on
=
8
Ω
(max) (@V
GS
=
4 V)
: R
on
=
12
Ω
(max) (@V
GS
=
2.5 V)
: R
on
=
45
Ω
(max) (@V
GS
=
1.5 V)
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
20
±
10
100
V
Gate-Source voltage
V
DC
Drain current
Pulse
200
mA
Drain power dissipation (Ta
=
25°C)
150
mW
Channel temperature
150
°C
Storage temperature range
55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Total rating, mounted on FR4 board
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 0.135 mm
2
×
5)
Marking
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Equivalent Circuit
(top view)
Unit: mm
JEDEC
JEITA
TOSHIBA
2-2P1B
0.3 mm
0
D T
5
4
1
2
3
Q1
5
4
1
2
3
Q2
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