參數(shù)資料
型號: SSM5N16FU
廠商: Toshiba Corporation
英文描述: High Speed Switching Applications
中文描述: 高速開關(guān)應(yīng)用
文件頁數(shù): 1/5頁
文件大?。?/td> 161K
代理商: SSM5N16FU
SSM5N16FU
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM5N16FU
High Speed Switching Applications
Analog Switching Applications
Suitable for high-density mounting due to compact package
Low on resistance: R
on
= 3.0
(max) (@V
GS
= 4 V)
: R
on
= 4.0
(max) (@V
GS
= 2.5 V)
: R
on
= 15
(max) (@V
GS
= 1.5 V)
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
20
V
Gate-Source voltage
V
GSS
±
10
V
DC
I
D
100
Drain current
Pulse
I
DP
200
mA
Drain power dissipation (Ta
=
25°C)
P
D
(Note 1)
200
mW
Channel temperature
T
ch
150
°
C
Storage temperature range
T
stg
55~150
°
C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-2L1B
D S
5
4
1
2
3
Q1
5
4
1
2
3
Q2
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