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參數(shù)資料
| 型號： | SSM5H07TU |
| 廠商： | Toshiba Corporation |
| 元件分類： | DC/DC變換器 |
| 英文描述： | Silicon Epitaxial Schottky Barrier Diode DC-DC Converter |
| 中文描述： | 硅肖特基二極管外延的DC - DC轉(zhuǎn)換器 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 274K |
| 代理商： | SSM5H07TU |
SSM5H07TU
2007-11-01
4
Schottky Diode
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
V
F (1)
I
F
=
0.3 A
0.33
0.39
V
Forward voltage
V
F (2)
I
F
=
0.5 A
0.37
0.43
V
Reverse current
I
R
V
R
=
12V
100
μ
A
Total capacitance
C
T
V
R
=
0 V, f
=
1 MHz
80
pF
Precaution
The schottky barrier diodes of this product have large-reverse-current-leakage characteristics compared to
other switching diodes. This current leakage and improper operating temperature or voltage may cause
thermal runaway resulting in breakdown. Take forward and reverse loss into consideration in radiation design
and safety design.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SSM5H08TU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon Epitaxial Schottky Barrier Diode DC-DC Converter |
| SSM5H12TU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DC-DC Converter Applications |
| SSM5H12TU(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH/SCHOTTKY 30V UFV |
| SSM5H14F | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode |
| SSM5H90TU(T5LC,E) | 制造商:Toshiba America Electronic Components 功能描述:DISCRETE |
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