參數資料
型號: SPW12N50C3
廠商: INFINEON TECHNOLOGIES AG
英文描述: Cool MOS™ Power Transistor
文件頁數: 3/11頁
文件大?。?/td> 255K
代理商: SPW12N50C3
2003-06-30
Page 3
SPW12N50C3
Final data
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
-
typ.
8
max.
-
Transconductance
g
fs
V
DS
2*
I
D
*
R
DS(on)max
,
I
D
=7A
S
Input capacitance
Output capacitance
Reverse transfer capacitance
C
iss
C
oss
C
rss
C
o(er)
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
1200
-
pF
-
400
-
-
30
-
Effective output capacitance,
3)
energy related
V
GS
=0V,
V
DS
=0V to 400V
-
45
-
pF
Effective output capacitance,
4)
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
o(tr)
-
92
-
t
d(on)
t
r
t
d(off)
t
f
V
DD
=380V,
V
GS
=0/10V,
I
D
=11.6A,
R
G
=6.8
-
10
-
ns
-
8
-
-
45
-
-
8
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
gs
Q
gd
Q
g
V
DD
=400V,
I
D
=11.6A
-
5
-
nC
-
26
-
Gate charge total
V
DD
=400V,
I
D
=11.6A,
V
GS
=0 to 10V
-
49
-
Gate plateau voltage
V
(plateau)
V
DD
=400V,
I
D
=11.6A
-
5
-
V
1Repetitve avalanche causes additional power losses that can be calculated as
P
AV
=
E
AR
*
f
.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
3
C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
4
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
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