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參數(shù)資料
| 型號(hào)： | SPU30P06P |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | SIPMOS Power-Transistor |
| 中文描述： | SIPMOS功率晶體管 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 112K |
| 代理商： | SPU30P06P |
1999-11-22
Page 2
SPD30P06P
SPU30P06P
Preliminary data
Thermal Characteristics
Parameter
Symbol
Unit
Values
typ.
min.
max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJC
R
thJA
R
thJA
-
-
-
-
1.2
100
75
50
-
-
-
-
K/W
Electrical Characteristics
, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= -250 μA
Gate threshold voltage,
V
GS
=
V
DS
I
D
= -1.7 mA
Zero gate voltage drain current
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= 150 °C
Gate-source leakage current
V
GS
= -20 V,
V
DS
= 0 V
Drain-source on-state resistance
V
GS
= -10 V,
I
D
= -21.5 A
V
(BR)DSS
-60
-
V
-
-2.1
-3
-4
V
GS(th)
μA
-1
-100
I
DSS
-0.1
-10
-
-
I
GSS
-
-10
-100
nA
R
DS(on)
-
0.069
0.075
W
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2
(one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
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