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參數(shù)資料
| 型號(hào)： | SPPBI07N60S5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷馬鞍山⑩功率晶體管 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 332K |
| 代理商： | SPPBI07N60S5 |
2004-03-30
Rev. 2.1
Page 7
SPP07N60S5, SPB07N60S5
SPI07N60S5
9 Forward characteristics of body diode
I
F
=
f
(V
SD
)
parameter:
T
j , t
p
= 10 μs
2
10
0
0.4
0.8
1.2
1.6
2
2.4
V
3
V
SD
-1
10
0
10
1
10
A
SPP07N60S5
I
F
T
j
= 25 °C typ
T
j
= 150 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C (98%)
10 Avalanche SOA
I
AR
=
f
(
t
AR
)
par.:
T
j
≤
150 °C
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
μs
t
AR
0
1
2
3
4
5
6
A
8
I
A
T
j
(START)
=125°C
T
j
(START)
=25°C
11 Avalanche energy
E
AS
=
f
(
T
j
)
par.:
I
D
= - A,
V
DD
= 50 V
20
40
60
80
100
120
°C
160
T
j
0
20
40
60
80
100
120
140
160
180
200
220
mJ
260
E
A
12 Drain-source breakdown voltage
V
(BR)DSS
=
f
(
T
j
)
-60
-20
20
60
100
°C
180
T
j
540
560
580
600
620
640
660
680
V
720
SPP07N60S5
V
(
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