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參數(shù)資料
| 型號(hào)： | SPP47N10 |
| 廠商： | SIEMENS AG |
| 英文描述： | S-FET technology 100-V MOS transistors( 采用S-FET 技術(shù)制作的 100-V MOS 型晶體管) |
| 中文描述： | 第S - FET技術(shù)100 - V MOS晶體管（采用第S - FET的技術(shù)制作的100 - V馬鞍山型晶體管） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 236K |
| 代理商： | SPP47N10 |
APPLICATIONS
POWER SEMICONDUCTORS
31
Components
2/99
Target applications
MOSFETs with break-
down voltages of 100 V
are used principally in
the
telecommunica-
tions, industrial and au-
tomotive sectors. Their
applications include:
DC-DC converters for
- telecommunications,
- boost converters for supplying an
additional voltage (e.g. HID
lamps, common rail systems),
- industrial power supplies for au-
tomation technology in the range
from several watts (flyback con-
verters) up to several kW (for-
ward converters).
UPS applications in the lower
power range for PCs or smaller
medical equipment,
Valve drivers for common-rail sys-
tems in the latest motor vehicles,
Pulse rectifiers for
- battery-powered vehicles
- low-voltage motors in industry
(fork-lift trucks, servo motors,
smaller positioning drives),
- Three-phase asynchronous mo-
tors,
- DC motors with electronic com-
mutation.
Simulation models
Circuit layouts can be designed
much more efficiently with the aid
of simulation models which take in-
to account self-heating effects.
The “PSpice” and “Saber” models
can be downloaded from the follow-
ing Internet address:
http://www.infineon.com/products/
36/368.htm
Chips alone are available for all
products.
SUMMARY
The new 100-V transistors in
S-FET technology allow a
significantly lower drain-source
on resistance and considerably
higher nominal currents than
hitherto.The user can implement
more compact designs thanks to
their greatly reduced power
dissipation.
Check #2-99-4 (HL) on
Reader Service Card
http://www.infineon.com/
products/36/361.htm
Fig.4 Extreme ruggedness is a special performance feature of MOS transis-
tors.
Competitor comparison of avalanche energy
Fig.3 A switch in the TO-220 package can handle up to 70 A at 100V.This was
made possible thanks to improvements in its thermal properties and mount-
ing technology.
Competitor comparison of drain current
plications becomes much simpler
because protection circuits for dis-
turbances (load jumps, short cir-
cuits,line surge voltages etc.) can be
obviated or significantly under-di-
mensioned.
Fig.2 The SPP70N10L in the TO-220 package attains the lowest R
DS(on)
available on the market for 100V transistors.
Competitor comparison of forward resistance
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SPP47N10L | 功能描述:MOSFET N-CH 100V 47A TO-220 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:SIPMOS® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| SPP4925B | 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:P-Channel Enhancement Mode MOSFET |
| SPP4925BS8RGB | 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:P-Channel Enhancement Mode MOSFET |
| SPP4931 | 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:P-Channel Enhancement Mode MOSFET |
| SPP4931S8RG | 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:P-Channel Enhancement Mode MOSFET |
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