參數(shù)資料
型號(hào)： SPP06N80C3
廠商： INFINEON TECHNOLOGIES AG
英文描述： Cool MOS⑩ Power Transistor
中文描述： 酷馬鞍山⑩功率晶體管
文件頁數(shù)： 3/11頁
文件大?。?/td> 130K
代理商： SPP06N80C3
2000-05-29
Page 3
SPP06N80C2
Preliminary data
Electrical Characteristics
, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
typ.
Unit
min.
max.
Characteristics
Transconductance
g
fs
V
DS
3
2*I
D
*R
DS(on)max
,
I
D
=3.8A
-
4
-
S
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
1)
energy related
Effective output capacitance,
2)
time related
C
iss
C
oss
C
rss
C
o(er)
V
GS
=0V, V
DS
=25V,
f=1MHz
-
-
-
-
785
390
20
22
-
-
-
-
pF
V
GS
=0V,
V
DS
=0V to 640 V
pF
C
o(tr)
-
42
-
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t
d(on)
t
r
t
d(off)
t
f
V
DD
=400V, V
GS
=0/10V,
I
D
=6A, R
G
=12
W
,
T
j
=125°C
-
-
-
-
25
15
48
8
-
-
ns
60
13
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
Q
gd
Q
g
V
DD
=640V,
I
D
=6A
-
-
-
2.5
9.8
19.4
-
-
nC
V
DD
=640V,
I
D
=6A,
V
GS
=0 to 10V
25
Gate plateau voltage
V
(plateau)
V
DD
=640V,
I
D
=6A
-
6
-
V
1
C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
2
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
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