參數(shù)資料
型號(hào)： SPP06N80C2
廠商： INFINEON TECHNOLOGIES AG
英文描述： Cool MOS Power Transistor
中文描述： 酷MOS功率晶體管
文件頁數(shù)： 2/11頁
文件大?。?/td> 130K
代理商： SPP06N80C2
2000-05-29
Page 2
SPP06N80C2
Preliminary data
Thermal Characteristics
Parameter
Symbol
Values
typ.
Unit
min.
max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
Linear derating factor
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
R
thJC
R
thJA
-
-
-
-
-
-
-
-
1.5
62
0.67
260
K/W
W/K
°C
T
sold
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V, I
D
=0.25mA
Drain-source avalanche breakdown voltage
V
(BR)DSS
800
-
-
V
V
GS
=0V, I
D
=6A
Gate threshold voltage,
V
GS
=
V
DS
I
D
=250μA
Zero gate voltage drain current
V
(BR)DS
-
870
-
V
GS(th)
2
3
4
V
DS
= 800 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 800 V,
V
GS
= 0 V,
T
j
= 150 °C
Gate-source leakage current
I
DSS
-
-
0.5
-
10
100
μA
V
GS
=20V, V
DS
=0V
Drain-source on-state resistance
I
GSS
-
-
100
nA
V
GS
=10V, I
D
=3.8A, T
j
=25°C
Gate input resistance
f= 1 MHz, open drain
R
DS(on)
-
780
900
m
W
R
G
-
0.7
-
W
1Repetitve avalanche causes additional power losses that can be calculated as
P
AV
=
E
AR
*
f
.
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