參數(shù)資料
型號： SPP02N80C3
廠商： INFINEON TECHNOLOGIES AG
英文描述： Cool MOS™ Power Transistor
文件頁數(shù)： 1/12頁
文件大小： 261K
代理商： SPP02N80C3
2003-10-14
Page 1
SPP02N80C3
SPA02N80C3
Final data
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme d
v
/d
t
rated
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
V
DS
R
DS(on)
I
D
800
V
A
2.7
2
P-TO220-3-31
P-TO220-3-1
P-TO220-3-31
1
2
3
Marking
02N80C3
02N80C3
Type
SPP02N80C3
Package
P-TO220-3-1
Ordering Code
Q67040-S4432
SPA02N80C3
P-TO220-3-31 Q67040S4634
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
2
1.2
2
1)
1.2
1)
A
I
D puls
E
AS
6
6
A
I
D
=1A,
V
DD
=50V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=2A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage
90
90
mJ
E
AR
0.05
0.05
I
AR
V
GS
V
GS
P
tot
T
j ,
T
stg
2
2
A
±20
±
30
42
±20
±
30
30.5
V
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
W
SPP
-55...+150
°C
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