參數(shù)資料
型號: SPN02N60C3
廠商: INFINEON TECHNOLOGIES AG
英文描述: Cool MOS⑩ Power Transistor
中文描述: 酷馬鞍山⑩功率晶體管
文件頁數(shù): 7/12頁
文件大?。?/td> 259K
代理商: SPN02N60C3
2004-03-01
Page 7
SPN02N60C3
Rev. 2.1
9 Typ. gate charge
V
GS
=
f
(
Q
Gate
)
parameter:
I
D
= 0.4 A pulsed
0
2
4
6
8
10
12
nC
15
Q
Gate
0
2
4
6
8
10
12
V
16
SPN02N60C3
V
G
0.2
V
DS max
0.8
V
DS max
10 Forward characteristics of body diode
I
F
=
f
(V
SD
)
parameter:
T
j , t
p
= 10 μs
1
10
0
0.4
0.8
1.2
1.6
2
2.4
V
3
V
SD
-2
10
-1
10
0
10
A
SPN02N60C3
I
F
T
j
= 25 °C typ
T
j
= 150 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C (98%)
11 Typ. drain current slope
d
i
/d
t
= f(
R
G
), inductive load,
T
j
= 125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
I
D
=0.4A
0
40
80
120
160
200
280
R
G
0
200
400
600
A/μs
1000
d
i
/
t
di/dt(on)
di/dt(off)
12 Typ. switching time
t
=
f
(
R
G
), inductive load,
T
j
=125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
I
D
=0.4 A
0
40
80
120
160
200
260
R
G
0
50
100
150
200
250
300
ns
400
t
td(off)
tf
td(on)
tr
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SPN02N60C3 E6433 功能描述:MOSFET COOL MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SPN02N60C3_05 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:New revolutionary high voltage technology Ultra low gate charge Ultra low effective capacitances
SPN02N60C3E6433XT 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 0.4A 4-Pin(3+Tab) SOT-223 T/R
SPN02N60C3NT 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 0.4A 4-Pin(3+Tab) SOT-223 T/R
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