參數(shù)資料
型號： SPN02N60C3
廠商： INFINEON TECHNOLOGIES AG
英文描述： Cool MOS⑩ Power Transistor
中文描述： 酷馬鞍山⑩功率晶體管
文件頁數(shù)： 2/12頁
文件大小： 259K
代理商： SPN02N60C3
2004-03-01
Page 2
SPN02N60C3
Rev. 2.1
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
V
DS
= 480 V,
I
D
= 1.8 A,
T
j
= 125 °C
d
v
/d
t
50
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
-
typ.
30
max.
-
Thermal resistance, junction - soldering point
R
thJS
R
thJA
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
-
-
110
-
-
70
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
T
sold
-
-
260
°C
Electrical Characteristics,
at
T
j=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
600
typ.
-
max.
-
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0V,
I
D
=0.25mA
V
(BR)DS
V
GS
=0V,
I
D
=0.25A
V
Drain-Source avalanche
breakdown voltage
-
700
-
Gate threshold voltage
Zero gate voltage drain current
V
GS(th)
I
DSS
I
D
=80
μΑ
,
V
GS
=
V
DS
2.1
3
3.9
V
DS
=600V,
V
GS
=0V,
T
j
=25°C,
T
j
=150°C
-
-
0.5
-
1
50
μA
Gate-source leakage current
I
GSS
V
GS
=30V,
V
DS
=0V
-
-
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10V,
I
D
=1.1A,
T
j
=25°C
T
j
=150°C
-
-
2.7
7.3
3
-
Gate input resistance
R
G
f
=1MHz, open Drain
-
9
-
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相關代理商/技術參數(shù)
參數(shù)描述
SPN02N60C3 E6433 功能描述:MOSFET COOL MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SPN02N60C3_05 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:New revolutionary high voltage technology Ultra low gate charge Ultra low effective capacitances
SPN02N60C3E6433XT 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 0.4A 4-Pin(3+Tab) SOT-223 T/R
SPN02N60C3NT 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 0.4A 4-Pin(3+Tab) SOT-223 T/R
SPN02N60C3XT 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 0.4A 4-Pin(3+Tab) SOT-223
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