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參數(shù)資料
| 型號： | SPN01N60C3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷馬鞍山⑩功率晶體管 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 228K |
| 代理商： | SPN01N60C3 |
2004-03-01
Page 3
SPN01N60C3
Rev. 2.1
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
-
typ.
0.45
max.
-
Transconductance
g
fs
V
DS
≥
2*
I
D
*
R
DS(on)max
,
I
D
=0.2A
S
Input capacitance
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
100
-
pF
Output capacitance
Reverse transfer capacitance
-
-
40
2.5
-
-
Turn-on delay time
V
DD
=350V,
V
GS
=0/10V,
I
D
=0.3A,
R
G
=100
-
45
-
ns
Rise time
-
30
-
Turn-off delay time
-
60
90
Fall time
-
30
45
Gate Charge Characteristics
Gate to source charge
Q
gs
Q
gd
Q
g
V
DD
=350V,
I
D
=0.3A
-
0.9
-
nC
Gate to drain charge
-
2.2
-
Gate charge total
V
DD
=350V,
I
D
=0.3A,
V
GS
=0 to 10V
-
3.9
5
Gate plateau voltage
V
(plateau)
V
DD
=350V,
I
D
=0.3A
-
5.5
-
V
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
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