參數(shù)資料
型號(hào): SPI42N03S2L-13
廠商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS Power-Transistor
中文描述: 的OptiMOS功率晶體管
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 541K
代理商: SPI42N03S2L-13
SPI42N03S2L-13
SPP42N03S2L-13 SPB42N03S2L-13
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
850
1130
pF
Output capacitance
C
oss
-
330
440
Reverse transfer capacitance
C
rss
-
90
130
Turn-on delay time
t
d(on)
-
6.5
9.8
ns
Rise time
t
r
-
12
18
Turn-off delay time
t
d(off)
-
24
36
Fall time
t
f
-
14.5
21.8
Gate Charge Characteristics
Gate to source charge
Q
gs
-
2.7
3.6
nC
Gate to drain charge
Q
gd
-
7.9
11.9
Gate charge total
Q
g
-
22.9
30.5
Gate plateau voltage
V
plateau
-
3.5
-
V
Reverse Diode
Diode continous forward current
I
S
-
-
42
A
Diode pulse current
I
S,pulse
-
-
248
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=42 A,
T
j
=25 °C
-
0.95
1.25
V
Reverse recovery time
t
rr
-
24
31
ns
Reverse recovery charge
Q
rr
-
18
23
nC
V
R
=15 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/μs
T
C
=25 °C
Values
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
V
DD
=15 V,
V
GS
=10 V,
I
D
=21 A,
R
G
=7.8
V
DD
=24 V,
I
D
=21 A,
V
GS
=0 to 10 V
Rev. 2.0
page 3
2004-06-04
相關(guān)PDF資料
PDF描述
SPB42N03S2L-13 OptiMOS Power-Transistor
SPP70N10L SIPMOS Power-Transistor
SPB70N10L SIPMOS Power-Transistor
SPI70N10L SIPMOS Power-Transistor
SPP70N10L 100-V MOS transistors in S-FET technology( 采用S-FET 技術(shù)制作的 100-V MOS 型晶體管)
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