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參數(shù)資料
| 型號： | SPI-238-18 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | DDC50SF0 |
| 中文描述： | 超小型光電斷路器（單晶體管型） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 40K |
| 代理商： | SPI-238-18 |
SPI-238-18
No.6026 1/6
Features
GaAs Infrared LED plus Single Phototransistor
Photo-Interrupter
Contact type
Compact type : H4.95
L6.0
W5.5mm
Absolute Maximum Ratings at Ta=25
°
C, 65%RH
Parameter
Forward Current
Reverse Voltage
Power Dissipation
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Curren
Power Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
*1
Symbol
I
F
V
R
P
D
V
CEO
V
ECO
I
C
P
C
Topr
Tstg
Tsol
Rating
50
5
70
20
5
20
70
--20 to +80
--30 to +85
260
Unit
mA
V
mW
V
V
mA
mW
°
C
°
C
°
C
Input LED
Output
Phototransistor
*1
Soldering conditions : time : max. 3sec; clearance : min. 1mm from lower stay
Electro-Optical Characteristics at Ta=25
°
C, 65%RH
Parameter
Forward Voltage
Reverse Current
Dark Current
Collector Output Current
Collector Emitter
Saturation Voltage
Rise Time
Fall Time
*1
Measurement Circuit of Collector Current
Symbol
V
F
I
R
I
CEO
I
C
Condition
Min.
1.0
--
--
40
Typ.
1.15
--
10
200
Max.
1.4
10
200
400
Unit
V
μ
A
nA
μ
A
Input
I
F
=10mA
V
R
=5V
I
F
=0mA, V
CE
=10V
I
F
=10mA, V
CE
=5V
*1
Output
Coupled
V
CE
(sat)
I
F
=10mA, I
C
=20
μ
A
--
--
0.5
V
tr
tf
V
CC
=5V, R
L
=100
I
C
=1mA
--
--
10
10
--
--
μ
s
μ
s
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SPI-238-18
GaAs Infrared LED
Ultraminiature photointerrupter
(single-transistor type)
72199 GI, (MI)
IF=10mA
Ic
VCE=5V
A
Ordering number : EN6026
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|---|---|
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