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參數(shù)資料
| 型號： | SPD28N03 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Insulation Displacement (IDC) Connector; No. of Contacts:50; Contact Termination:IDC; Gender:Female; Contact Plating:Nickel; Pitch Spacing:0.05" RoHS Compliant: Yes |
| 中文描述： | SIPMOS功率晶體管 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 142K |
| 代理商： | SPD28N03 |
SPD 28N03
Data Sheet
4
06.99
Electrical Characteristics
, at
T
j = 25 C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Gate to source charge
V
DD
= 24 V,
I
D
= 28 A
Gate to drain charge
V
DD
= 24 V,
I
D
= 28 A
Gate charge total
V
DD
= 24 V,
I
D
= 28 A,
V
GS
= 0 to 10 V
Gate plateau voltage
V
DD
= 24 V,
I
D
= 28 A
6
nC
4
Q
gs
-
-
13.6
Q
gd
20
-
25
38
Q
g
V
(plateau)
5.6
-
V
-
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 C
Inverse diode direct current,pulsed
T
C
= 25 C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 56 A
Reverse recovery time
V
R
= 15 V,
I
F
=
I
S
, d
i
F
/d
t
= 100 A/μs
Reverse recovery charge
V
R
= 15 V,
I
F=
l
S
, d
i
F
/d
t
= 100 A/μs
I
S
-
-
28
A
I
SM
-
-
112
V
SD
-
1.1
V
1.7
t
rr
-
38
ns
57
Q
rr
-
μC
0.032
0.048
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| SPD28N03L | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS Power Transistor |
| SPD28N05L | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS Power Transistor |
| SPD30N03 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS Power Transistor |
| SPD30N03L | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS Power Transistor |
| SPD30N03S2L-07 | 功能描述:MOSFET N-CH 30V 30A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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