參數(shù)資料
型號: SPB80P06P
廠商: INFINEON TECHNOLOGIES AG
英文描述: SIPMOS Power-Transistor
中文描述: SIPMOS功率晶體管
文件頁數(shù): 8/9頁
文件大?。?/td> 96K
代理商: SPB80P06P
1999-11-22
Page 8
SPP80P06P
SPB80P06P
Preliminary data
Avalanche energy
E
AS
= f (T
j
)
para.: I
D
= -80 A , V
DD
= -25 V, R
GS
= 25
W
25
45
65
85
105
125
145
°C
185
T
j
0
100
200
300
400
500
600
700
mJ
850
E
A
Typ. gate charge
V
GS
= f (Q
Gate
)
parameter: I
D
= -80 A pulsed
SPP80P06P
0
20
40
60
80
100
120
140
nC
180
Q
Gate
0
-2
-4
-6
-8
-10
-12
V
-16
V
G
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V
(BR)DSS
= f (T
j
)
-60
-20
20
60
100
140
°C
200
T
j
-54
-56
-58
-60
-62
-64
-66
-68
V
-72
SPP80P06P
V
(
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