參數(shù)資料
型號： SPA11N80C3
廠商： INFINEON TECHNOLOGIES AG
英文描述： Cool MOS⑩ Power Transistor
中文描述： 酷馬鞍山⑩功率晶體管
文件頁數(shù)： 2/12頁
文件大?。?/td> 253K
代理商： SPA11N80C3
2003-07-02
Page 2
SPP11N80C3
SPA11N80C3
Final data
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
V
DS
= 640 V,
I
D
= 11 A,
T
j
= 125 °C
d
v
/d
t
50
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
-
typ.
-
max.
0.8
Thermal resistance, junction - case
R
thJC
R
thJC_FP
R
thJA
R
thJA_FP
T
sold
K/W
Thermal resistance, junction - case, FullPAK
-
-
3.7
Thermal resistance, junction - ambient, leaded
-
-
62
Thermal resistance, junction - ambient, FullPAK
-
-
80
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
3)
-
-
260
°C
Electrical Characteristics,
at
T
j=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
800
typ.
-
max.
-
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0V,
I
D
=0.25mA
V
(BR)DS
V
Drain-Source avalanche
breakdown voltage
V
GS
=0V,
I
D
=11A
-
870
-
Gate threshold voltage
V
GS(th)
I
DSS
I
D
=680
μ
A,
V
GS=VDS
2.1
3
3.9
Zero gate voltage drain current
V
DS
=800V,
V
GS
=0V,
T
j
=25°C
T
j
=150°C
-
-
0.5
-
20
200
μA
Gate-source leakage current
I
GSS
R
DS(on)
V
GS
=20V,
V
DS
=0V
-
-
100
nA
Drain-source on-state resistance
V
GS
=10V,
I
D
=7.1A
T
j
=25°C
T
j
=150°C
-
-
0.39
1.1
0.45
-
Gate input resistance
R
G
f
=1MHz, open drain
-
0.7
-
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